# Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

https://mdr.nims.go.jp/datasets/100d8ab5-aea2-41a1-a411-6a0c54f7c8e4

## File

- [Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing.pdf](https://mdr.nims.go.jp/filesets/367a1eec-fd11-47a8-9e0d-d316794a7ca8/download) ([Detail](https://mdr.nims.go.jp/filesets/367a1eec-fd11-47a8-9e0d-d316794a7ca8.md))

## Id

100d8ab5-aea2-41a1-a411-6a0c54f7c8e4

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-07-03T08:30:07.070451Z

## Updated at

2024-01-05T13:11:22.686133Z

## Published at

2023-07-04T04:30:13.445103Z

## Doi

https://doi.org/10.48505/nims.4209

## First published url

https://doi.org/10.1063/5.0087248

## Date published

2022-05-14

## Recorded date published

2022-5-14

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure
    annealing
  title_type: original
  lang: en

## Description

- description: An area selective doping via ion implantation is a key technology to
    realize gallium nitride (GaN) based energy-efficient power devices; however, conventional
    annealing leads to the formation of numerous Mg-enriched defects, which results
    in inefficient p-type activation. Recent invention of ultra-high-pressure annealing
    (UHPA) has enabled a significant improvement of p-type activation efficiency.
    In this study, we investigated the formation of Mg-enriched defects in Mg implanted
    GaN followed by annealing under both conventional atmospheric pressure and ultra-high-pressure.
    Unlike the conventional annealing, UHPA leads to much lower number density of
    Mg-enriched defects. Correlative scanning transmission electron microscopy (STEM),
    atom probe tomography (APT), cathodoluminescence (CL) and secondary ion mass spectrometry
    (SIMS) analyses have shown that the number density of Mg-enriched defects are
    substantially suppressed by the UHPA. The dissolved Mg concentrations in the GaN
    matrix for both the conventional and the UHPA samples are almost at the same value,
    approximately 2 × 1018 cm-3; however, the UHPA sample shows over one order of
    magnitude stronger intensity of donor-acceptor-pair (DAP) emission than the conventional
    one. Thus, the implanted Mg is effectively activated as acceptors through the
    UHPA technique.
  description_type: abstract
  lang: eng

## Creator

- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Jun Chen
  role: author
  orcid: https://orcid.org/0000-0003-4272-2653
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Ashutosh Kumar
  role: author
  orcid: https://orcid.org/0000-0002-8085-1598
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Wei Yi
  role: author
  orcid: https://orcid.org/0000-0001-5040-8416
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Ryo Tanaka
  role: author
- name: Shinya Takashima
  role: author
- name: Masaharu Edo
  role: author
- name: Kacper Sierakowski
  role: author
- name: Michal Bockowski
  role: author
- name: Hideki Sakurai
  role: author
- name: Tetsu Kachi
  role: author
- name: Takashi Sekiguchi
  role: author
  orcid: https://orcid.org/0000-0002-7365-9979
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kazuhiro Hono
  role: author
  orcid: https://orcid.org/0000-0001-7367-0193
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: gallium nitride
  schema: not_defined
- subject: implantation
  schema: not_defined
- subject: atom probe tomography
  schema: not_defined
- subject: cathodoluminescence
  schema: not_defined
- subject: scanning transmission electron microscopy
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: JOURNAL OF APPLIED PHYSICS
  issn: '00218979'
  volume: '131'
  issue: '18'
  start_page: 185701
  end_page: 185701

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## Fileset

- id: 367a1eec-fd11-47a8-9e0d-d316794a7ca8
  filename: Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure
    annealing.pdf
  content_type: application/pdf
  size: 2426591
  md5: 613b89f78d7142b6cb8c54b48e9bbef6

## Thumbnail

fileset_id: 367a1eec-fd11-47a8-9e0d-d316794a7ca8
filename: Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure
  annealing.pdf