# Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits

https://mdr.nims.go.jp/datasets/0fcacbf4-3b16-4100-a410-3e463f735c0d

## File

- [manuscript (unmarked).pdf](https://mdr.nims.go.jp/filesets/0635f147-d0a3-486a-a17e-1003ba377e45/download) ([Detail](https://mdr.nims.go.jp/filesets/0635f147-d0a3-486a-a17e-1003ba377e45.md))

## Id

0fcacbf4-3b16-4100-a410-3e463f735c0d

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-03-27T02:09:26.629082Z

## Updated at

2025-05-21T23:30:45.183162Z

## Published at

2025-05-21T23:23:15.741158Z

## Doi

https://doi.org/10.48505/nims.4518

## First published url

https://doi.org/10.1007/978-3-031-47556-6

## Date published

2024-05-22

## Recorded date published

2024

## Resource type

book

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits
  title_type: original
  lang: en

## Description

- description: 'Wide-bandgap semiconductor diamond has been studied to develop high-power,
    high-frequency, and high-temperature electronic devices. However, their development
    has been limited by the low free carrier density that occurs in diamond at room
    temperature because of the high activation energies of p-type boron and n-type
    phosphorus dopants. Fortunately, hydrogen-terminated diamond (H-diamond) can accumulate
    two-dimensional hole gases on its surface with a high free carrier density. In
    this chapter, we review our recent progress in the fabrication of H-diamond metal-oxide-semiconductor
    (MOS) capacitors, MOS field-effect transistors (MOSFETs), and MOSFET logic circuits.
    Specifically, the leakage current densities for different oxide insulators on
    H-diamond and the capacitance-voltage properties for the Al2O3/H-diamond MOS capacitors
    are discussed. Planar-type, T-type, and triple-gate fin-type H-diamond MOSFETs
    are reviewed, and the fabrication and performance of depletion- and enhancement-mode
    H-diamond MOSFETs and logic circuits are summarized. '
  description_type: abstract
  lang: eng

## Creator

- name: Jiangwei Liu
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Next-generation Semiconductor Group
  ror: https://ror.org/026v1ze26
- name: Yasuo Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Next-generation Semiconductor Group
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: Springer Cham

## Managing organization



## Keyword

- subject: diamond
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-05-22
end_date: 2025-05-22

## Journal

- title: Chapter of Novel Aspects of Diamond, Springer
  issn: '14370859'

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## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Fileset

- id: 0635f147-d0a3-486a-a17e-1003ba377e45
  filename: manuscript (unmarked).pdf
  content_type: application/pdf
  size: 2192921
  md5: 97071ee24a2d22e01bf6ba1becfd391d

## Thumbnail

fileset_id: 0635f147-d0a3-486a-a17e-1003ba377e45
filename: manuscript (unmarked).pdf