# Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition Metal Dichalcogenides

https://mdr.nims.go.jp/datasets/0f1d225f-f69f-478f-94ce-1b2948fef0ff

## Files

- [Advanced Materials - 2022 - Gan - Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus Transition.pdf](https://mdr.nims.go.jp/filesets/fbbab2be-021b-47ea-a485-00ab2424c8e2/download) ([Detail](https://mdr.nims.go.jp/filesets/fbbab2be-021b-47ea-a485-00ab2424c8e2.md))

## Id

0f1d225f-f69f-478f-94ce-1b2948fef0ff

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-25T04:04:39.140856Z

## Updated at

2025-02-25T23:30:46.586454Z

## Published at

2025-02-25T23:30:46.664580Z

## Doi



## First published url

https://doi.org/10.1002/adma.202205226

## Date published

2022-08-21

## Recorded date published

2022-9

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Chemical Vapor Deposition of High‐Optical‐Quality Large‐Area Monolayer Janus
    Transition Metal Dichalcogenides
  title_type: original
  lang: en

## Description

- description: One-pot chemical vapor deposition (CVD) growth of large-area Janus
    SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen
    atomic planes with respect to the central transition metal (Mo) atoms. The formation
    of these 2D semiconductor monolayers takes place upon the thermo- dynamic-equilibrium-driven
    exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on
    gold foils with S atoms. The growth process is characterized by complementary
    experimental techniques including Raman and X-ray photoelectron spectroscopy,
    transmission electron microscopy, and the growth mechanisms are rationalized by
    first principle calculations. The remarkably high optical quality of the synthesized
    Janus monolayers is demonstrated by optical and magneto-optical measurements which
    reveal the strong exciton– phonon coupling and enable an exciton g-factor of −3.3.
  description_type: abstract
  lang: und

## Creator

- name: Ziyang Gan
  role: author
- name: Ioannis Paradisanos
  role: author
- name: Ana Estrada‐Real
  role: author
- name: Julian Picker
  role: author
- name: Emad Najafidehaghani
  role: author
- name: Francis Davies
  role: author
- name: Christof Neumann
  role: author
- name: Cedric Robert
  role: author
- name: Peter Wiecha
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Xavier Marie
  role: author
- name: Johannes Biskupek
  role: author
- name: Manuel Mundszinger
  role: author
- name: Robert Leiter
  role: author
- name: Ute Kaiser
  role: author
- name: Arkady V. Krasheninnikov
  role: author
- name: Bernhard Urbaszek
  role: author
- name: Antony George
  role: author
- name: Andrey Turchanin
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Chemical vapor deposition
  schema: not_defined
- subject: Janus SeMoS
  schema: not_defined
- subject: exciton-phonon coupling
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Advanced Materials
  issn: '15214095'
  volume: '34'
  issue: '38'

## Conference



## Related item



## Funding

- identifier: INST 275/257‐1
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: '313713174'
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: '398816777'
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: TU149/13‐1
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: '443361515'
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: TU149/9‐1
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: '397373225'
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: KR4866/8‐1
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: '464283495'
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: JPMJCR15F3
  funder_name: Core Research for Evolutional Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: fbbab2be-021b-47ea-a485-00ab2424c8e2
  filename: Advanced Materials - 2022 - Gan - Chemical Vapor Deposition of High‐Optical‐Quality
    Large‐Area Monolayer Janus Transition.pdf
  content_type: application/pdf
  size: 2596811
  md5: 928cb98af728931fcf38dfa54a3f8764

## Thumbnail

fileset_id: fbbab2be-021b-47ea-a485-00ab2424c8e2
filename: Advanced Materials - 2022 - Gan - Chemical Vapor Deposition of High‐Optical‐Quality
  Large‐Area Monolayer Janus Transition.pdf