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One-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these 2D semiconductor monolayers takes place upon the thermo- dynamic-equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy, transmission electron microscopy, and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton– phonon coupling and enable an exciton g-factor of −3.3.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: Chemical vapor deposition, Janus SeMoS, exciton-phonon coupling

刊行年月日: 2022-08-21

出版者: Wiley

掲載誌:

• Advanced Materials (ISSN: 15214095) vol. 34 issue. 38

研究助成金:

• Deutsche Forschungsgemeinschaft INST 275/257‐1
• Deutsche Forschungsgemeinschaft 313713174
• Deutsche Forschungsgemeinschaft 398816777
• Deutsche Forschungsgemeinschaft TU149/13‐1
• Deutsche Forschungsgemeinschaft 443361515
• Deutsche Forschungsgemeinschaft TU149/9‐1
• Deutsche Forschungsgemeinschaft 397373225
• Deutsche Forschungsgemeinschaft KR4866/8‐1
• Deutsche Forschungsgemeinschaft 464283495
• Core Research for Evolutional Science and Technology JPMJCR15F3

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/adma.202205226

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更新時刻: 2025-02-26 08:30:46 +0900

MDRでの公開時刻: 2025-02-26 08:30:46 +0900