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説明:

It has been recently postulated, that the strongly correlated flat bands of magicangle twisted bilayer graphene (MATBG) can host coexisting heavy and light carriers. While transport and spectroscopic measurements have shown hints of this behavior, a more direct experimental proof is still lacking. Here, we explore the thermoelectric response of MATBG through the photo-thermoelectric (PTE) effect in gate-defined MATBG pn-junctions. At low temperatures, we observe sign-preserving, fillingdependent oscillations of the Seebeck coefficient at non-zero integer fillings of the moiré lattice, which suggest the preponderance of one carrier type despite tuning the Fermi level from hole to electron doping of the correlated insulator. Furthermore, at higher temperatures, the thermoelectric response provides distinct evidence of the strong electron correlations in the unordered, normal state. We show that our observations are naturally accounted for by the interplay of light and long-lived and heavy and short-lived electron bands near the Fermi level at non-zero integer fillings. Our observations firmly establish the electron and hole asymmetry of the correlated gaps in MATBG, and shows excellent qualitative agreement with the recently developed topological heavy fermion model (THF).

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: magic-angle twisted bilayer graphene
, thermoelectric transport, heavy fermions

刊行年月日: 2025-05-22

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Physics (ISSN: 17452481) vol. 21 issue. 7 p. 1078-1084

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41567-025-02912-x

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更新時刻: 2026-03-09 09:30:23 +0900

MDRでの公開時刻: 2026-03-09 12:27:45 +0900