# Effect of Si addition on epitaxial growth and gas sensing properties of tungsten oxide films

https://mdr.nims.go.jp/datasets/0d5ea082-4a25-42ae-83d0-3a1a77ea6e71

## File

- [132_23121.pdf](https://mdr.nims.go.jp/filesets/d2d065f4-26aa-4ccb-b6dc-bd4d17d6c069/download) ([Detail](https://mdr.nims.go.jp/filesets/d2d065f4-26aa-4ccb-b6dc-bd4d17d6c069.md))

## Id

0d5ea082-4a25-42ae-83d0-3a1a77ea6e71

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-05-23T10:01:12.199362Z

## Updated at

2024-05-24T03:30:24.909934Z

## Published at

2024-05-24T03:30:25.034673Z

## Doi



## First published url

https://doi.org/10.2109/jcersj2.23121

## Date published

2024-05-01

## Recorded date published

2024

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Effect of Si addition on epitaxial growth and gas sensing properties of tungsten
    oxide films
  title_type: original
  lang: en

## Description

- description: "WO3 epitaxial films with the same thickness and in-plane crystal grain
    size were prepared using pulsed laser deposition with various Si contents in the
    target to clarify the effect of Si addition to WO3 on the gas sensing properties.
    X-ray diffraction measurements indicated that the films grown on the (1\x02102)
    face of sapphire had a (001) orientation with in-plane epitaxial relationships
    of [110]WO3//[0111] or [110]WO3//[2110]Al2O3, regardless\r\nof the Si content.
    Scanning probe microscopy observations revealed that particles with a diameter
    of several tens of nanometers grow on the surface of the Si-doped WO3 film. Measurements
    of the gas response to ethanol and acetone showed superior gas selectivity towards
    acetone gas at low temperatures, which is due to the catalytic effect of SiOx
    particles on the film surface."
  description_type: abstract
  lang: und

## Creator

- name: Yutaka Adachi
  role: author
  orcid: https://orcid.org/0000-0003-2666-5521
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: Ceramic Society of Japan

## Managing organization



## Keyword

- subject: Tungsten trioxide
  schema: not_defined
- subject: Epitaxial film
  schema: not_defined
- subject: Si doping
  schema: not_defined
- subject: Acetone
  schema: not_defined
- subject: Ethanol
  schema: not_defined
- subject: Gas selectivity
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Journal of the Ceramic Society of Japan
  issn: '13486535'
  volume: '132'
  issue: '5'
  start_page: 227
  end_page: 231
  article_number: '23121'

## Conference



## Related item



## Funding

- identifier: 21K04647
  funder_name: JSPS

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: d2d065f4-26aa-4ccb-b6dc-bd4d17d6c069
  filename: 132_23121.pdf
  content_type: application/pdf
  size: 1626522
  md5: 38b415772a67030ff320bc7fdee47c07

## Thumbnail

fileset_id: d2d065f4-26aa-4ccb-b6dc-bd4d17d6c069
filename: 132_23121.pdf