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Hot carrier solar cells (HCSCs), harvesting the excess energy of hot carriers generated by above-band gap photoexcitation, are crucial for pushing the solar cell efficiency beyond the Shockley–Queisser limit, which is challenging to realize mainly due to fast hot-carrier cooling. By performing transient reflectance spectroscopy in a MoSe2/hBN/WS2 junction, we demonstrate the gate-tunable harvest of hot electrons from MoSe2 to WS2. By spectrally distinguishing hot-electron extraction from lattice temperature increase, we find that electrostatically doped electrons in MoSe2 can boost hot-electron extraction density (nET) by a factor up to several tens. Such enhancement arises from the interaction between hot excitons and doped electrons, which converts the excess energy of hot excitons to excitations of the Fermi sea and hence generates hot electrons. Moreover, nET can be further enhanced by reducing the conduction band offset with an external electric field. Our results provide in-depth insights into the design of HCSCs with electrostatic strategies.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Article that appeared in final form in Nano Letters, copyright © 2025 American Chemical Society. To access the final published article see https://doi.org/10.1021/acs.nanolett.4c06416.

キーワード: Hot carrier solar cells, Transient reflectance spectroscopy, MoSe2/WS2 junction

刊行年月日: 2025-04-30

出版者: American Chemical Society (ACS)

掲載誌:

• Nano Letters (ISSN: 15306984) vol. 25 issue. 17 p. 6872-6878

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.4c06416

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更新時刻: 2026-07-06 13:40:18 +0900

MDRでの公開時刻: 2026-07-06 16:27:57 +0900