Enhancement of electron magnetic susceptibility due to many-body interactions in monolayer MoSe<sub>2</sub>

K Oreszczuk; A Rodek; M Goryca; T Kazimierczuk; M Raczyński; J Howarth; T Taniguchi; K Watanabe; M Potemski; P Kossacki

doi:10.1088/2053-1583/acefe3

論文 Enhancement of electron magnetic susceptibility due to many-body interactions in monolayer MoSe₂

K Oreszczuk ; A Rodek ; M Goryca ; T Kazimierczuk ; M Raczyński ; J Howarth ; T Taniguchi (National Institute for Materials Science) ; K Watanabe (National Institute for Materials Science) ; M Potemski ; P Kossacki

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K Oreszczuk, A Rodek, M Goryca, T Kazimierczuk, M Raczyński, J Howarth, T Taniguchi, K Watanabe, M Potemski, P Kossacki. Enhancement of electron magnetic susceptibility due to many-body interactions in monolayer MoSe₂. 2D Materials. 2023, 10 (4), 045019. https://doi.org/10.1088/2053-1583/acefe3

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(abstract)

We present a new all-optical experimental approach for the determination of electron magnetic susceptibility and the effective electron g-factor in low and moderate 2DEG densities in the monolayer MoSe2. We explore deep into the low carrier density regime and reveal strong collective effects. By comparing our results with the QMC calculations, we obtain the value of the lower electron band g-factor in the absence of the interaction effects: g0 = 2.5 ± 0.4. This value, while coherent with other experimental approaches, contests the results of to-date Ab Initio calculations.

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