# Epitaxial relationship of NiO on (-102) β-Ga2O3

https://mdr.nims.go.jp/datasets/0918752a-1e3f-466e-b058-313716ccf3cd

## File

- [NiO_Ga2O3.docx](https://mdr.nims.go.jp/filesets/7ea8ef08-0da7-442d-ab6e-1d8caa7238ee/download) ([Detail](https://mdr.nims.go.jp/filesets/7ea8ef08-0da7-442d-ab6e-1d8caa7238ee.md))

## Id

0918752a-1e3f-466e-b058-313716ccf3cd

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-11-24T00:38:58.254860Z

## Updated at

2024-11-23T07:30:35.537766Z

## Published at

2024-11-23T07:30:35.626857Z

## Doi

https://doi.org/10.48505/nims.4271

## First published url

https://doi.org/10.35848/1347-4065/ad0ac9

## Date published

2023-12-01

## Recorded date published

2023-12-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Epitaxial relationship of NiO on (-102) β-Ga2O3
  title_type: original
  lang: en

## Description

- description: We investigated the epitaxial relationship of an electron-beam-evaporated
    NiO film on a custom-ordered (-102) β-Ga2O3 substrate with a surface orientation
    rotated by 13.8° around [010] axis relative to the commonly-used (001) substrate.
    X-Ray diffraction and transmission electron microscopy measurements confirmed
    that the film was monocrystalline with out-of-plane and in-plane alignments of
    (110)NiO||(-102)β-Ga2O3 and [-110] NiO||[010]β-Ga2O3, respectively, indicating
    that the film grew on the substrate while maintaining the orientation of the cubic-close-packed
    (ccp) oxygen sublattice across the interface. The use of the low-index (110) epitaxial
    plane within the ccp lattice may be preferred for pn-heterojunctions over the
    higher-index (331) plane on the (001) β-Ga2O3 substrate.
  description_type: abstract
  lang: eng

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials
- name: Shinji Nakagomi
  role: author
  organization: Ishinomaki Senshu University
  department: Faculty of Science and Engineering

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: NiO
  schema: not_defined
- subject: epitaxial relationship
  schema: not_defined

## Rights

- description: "© 2023 The Japan Society of Applied Physics<br>\r\nThis is an author-created,
    un-copyedited version of an article accepted for publication /published in Japanese
    Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors
    or omissions in this version of the manuscript orany version derived from it.
    The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad0ac9."
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2023-11-23
end_date: 2024-11-23

## Journal

- title: JAPANESE JOURNAL OF APPLIED PHYSICS
  issn: '00214922'
  volume: '62'
  issue: '12'
  start_page: 128001
  end_page: 128001

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## Funding

- funder_name: the TEPCO Memorial Foundation

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## Fileset

- id: 7ea8ef08-0da7-442d-ab6e-1d8caa7238ee
  filename: NiO_Ga2O3.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 4431631
  md5: 305fea75f4be35c15cd2a085c1b036c9

## Thumbnail

fileset_id: 7ea8ef08-0da7-442d-ab6e-1d8caa7238ee
filename: NiO_Ga2O3.docx