E. Mania
;
A. R. Cadore
;
T. Taniguchi
(National Institute for Materials Science)
;
K. Watanabe
(National Institute for Materials Science)
;
L. C. Campos
説明:
(abstract)We report on a high-quality domain wall formed at the curved boundary of folded bilayer graphene (folded-BLG). At such 1D conducting channel, we measured a two-terminal resistance close to the quantum resistance R = e2/4h at zero magnetic field, a signature of kink states. Our experiments reveal a long-range ballistic transport regime that occurs only at the DW of the folded-BLG, while the other regions behave likely semiconductors with tunable band gap.
権利情報:
キーワード: Valleytronics, bilayer graphene, domain wall
刊行年月日: 2019-01-11
出版者: Springer Science and Business Media LLC
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1038/s42005-018-0106-4
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-23 22:49:17 +0900
MDRでの公開時刻: 2025-02-23 22:49:17 +0900
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s42005-018-0106-4.pdf
(サムネイル)
application/pdf |
サイズ | 797KB | 詳細 |