# Interlayer Phonon Coupling and Enhanced Electron–Phonon Interactions in Doubly Aligned hBN/Graphene/hBN Heterostructures

https://mdr.nims.go.jp/datasets/07acd9d5-d924-4cbf-995b-868939313fa2

## File

- [2025A00651G_anharmoncity_accepted_merged.pdf](https://mdr.nims.go.jp/filesets/b38519bb-87ee-4ed9-983e-ad7caf33b4db/download) ([Detail](https://mdr.nims.go.jp/filesets/b38519bb-87ee-4ed9-983e-ad7caf33b4db.md))

## Id

07acd9d5-d924-4cbf-995b-868939313fa2

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-29T00:26:05.048300Z

## Updated at

2026-07-29T00:58:35.352191Z

## Published at

2026-07-29T03:29:20.522178Z

## Doi



## First published url

https://doi.org/10.1021/acsnano.4c17152

## Date published

2025-05-06

## Recorded date published

2025-5-6

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Interlayer Phonon Coupling and Enhanced Electron–Phonon Interactions in Doubly
    Aligned hBN/Graphene/hBN Heterostructures
  title_type: original
  lang: en

## Description

- description: Engineering the band structure via moiré superlattices plays a crucial
    role in tailoring the electronic and phononic spectra of hBN/graphene heterostructures,
    enabling a range of emergent properties. While moiré heterostructures have been
    extensively studied through transport measurements to investigate electronic spectra,
    their influence on the phononic spectrum, particularly on phonon–phonon and electron–phonon
    interactions, remains less explored. In this study, we examine the temperature-dependent
    (8 K–300 K) frequency and line width responses of the phonon near the K-point
    of graphene in hBN/graphene/hBN heterostructures for nonaligned, partially aligned,
    singly aligned, and doubly aligned configurations. The nonaligned samples, where
    the graphene is rotated by 30° with respect to both top and bottom hBN, exhibit
    pristine graphene behavior, characterized by minimal frequency variation with
    temperature and a typical line width increase with increasing temperature. In
    contrast, doubly aligned samples, where graphene and both hBN are perfectly aligned,
    display anomalous behavior, with the Raman frequency decreasing linearly and the
    lifetime increasing with increasing temperature. This anomalous anharmonic response
    could not be explained by the existing models considering only intralayer (within
    the graphene) phonon–phonon interactions, but rather indicates the role of strong
    interlayer phonon–phonon coupling (between hBN and graphene phonons), hitherto
    not observed. Furthermore, the enhanced electron–phonon interactions due to the
    resonant condition of phonon decay into electronic channels of doubly aligned
    hBN/graphene/hBN heterostructures explain the observed line width behavior. Our
    findings demonstrate the ability to engineer phonon–phonon and electron–phonon
    interactions through the precise alignment of hBN and graphene lattices, with
    implications for thermal management and carrier transport optimization in hBN/graphene/hBN
    heterostructures.
  description_type: abstract
  lang: en

## Creator

- name: Anish Kumar
  role: author
- name: Darshit Solanki
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: A. K. Sood
  role: author
- name: Anindya Das
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Moiré superlattice
  schema: not_defined
- subject: Graphene/hBN heterostructure
  schema: not_defined
- subject: Phonon-phonon interaction
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Article
    that appeared in final form in ACS Nano, copyright © 2025 American Chemical Society.
    To access the final published article, see https://doi.org/10.1021/acsnano.4c17152.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-04-25
end_date: 2026-04-25

## Journal

- title: ACS Nano
  issn: 1936086X
  volume: '19'
  issue: '17'
  start_page: 16415
  end_page: 16423

## Conference



## Related item



## Funding

- identifier: SP/IFCP-22-0005
  funder_name: Indo-French Centre for the Promotion of Advanced Research
- identifier: SP/SERB-22-0387
  funder_name: Science and Engineering Research Board
- funder_name: RIKEN
- identifier: DST/NM/TUE/QM-5/2019
  funder_name: Nano Mission Council
- funder_name: Department of Science and Technology, Ministry of Science and Technology,
    India
- identifier: 19H05790
  funder_name: Japan Society for the Promotion of Science
- identifier: 20H00354
  funder_name: Japan Society for the Promotion of Science
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science

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## Fileset

- id: b38519bb-87ee-4ed9-983e-ad7caf33b4db
  filename: 2025A00651G_anharmoncity_accepted_merged.pdf
  content_type: application/pdf
  size: 4055188
  md5: ddd156ab3ee2153cd23c32873a73b940

## Thumbnail

fileset_id: b38519bb-87ee-4ed9-983e-ad7caf33b4db
filename: 2025A00651G_anharmoncity_accepted_merged.pdf