# Improved Strain Engineering of Monolayer Transition Metal Dichalcogenides via Van der Waals Epitaxy on Graphene/SiC(0001)

https://mdr.nims.go.jp/datasets/071d4447-b277-4f81-bcfb-dad9ea6ed4d6

## File

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## Id

071d4447-b277-4f81-bcfb-dad9ea6ed4d6

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-08-28T00:18:34.197304Z

## Updated at

2025-08-28T04:36:01.370094Z

## Published at

2026-08-05T23:26:22.747538Z

## Doi

https://doi.org/10.48505/nims.5679

## First published url

https://doi.org/10.1021/acs.nanolett.5c02492

## Date published

2025-08-27

## Recorded date published

2025-8-27

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Improved Strain Engineering of Monolayer Transition Metal Dichalcogenides
    via Van der Waals Epitaxy on Graphene/SiC(0001)
  title_type: original
  lang: en

## Description

- description: Engineering thermal strain is crucial for tuning the properties and
    functionalities of transition metal dichalcogenides (TMDs). Thermal strain arises
    from the thermal expansion coefficient (TEC) mismatch between TMDs and substrates,
    but conventional substrates often induce inhomogeneous broadening in the electronic
    structure, mainly due to surface roughness and charged impurities. Here, we demonstrate
    uniform thermal strain in monolayer WSe2 via van der Waals epitaxy on graphene/SiC(0001)
    substrates. Compared to WSe2 grown on graphite, its photoluminescence peaks show
    a redshift and line width narrowing of about 30%. These results suggest that uniform
    tensile strain is introduced to WSe2 due to the small TEC of SiC, and interfacial
    graphene suppresses the inhomogeneous broadening. Furthermore, tensile-strained
    monolayer MoS2 grown on graphene/SiC exhibits enhanced catalytic activity for
    the hydrogen evolution reaction. Our findings highlight the potential of the graphene/SiC
    substrate as a platform for improved strain engineering in TMDs, enabling future
    applications in electronics, optoelectronics, and electrocatalysis.
  description_type: abstract
  lang: und

## Creator

- name: Ryotaro Sakakibara
  role: author
  orcid: https://orcid.org/0000-0001-7150-2831
- name: Kaito Hirata
  role: author
  orcid: https://orcid.org/0000-0003-1489-2938
- name: Yasufumi Takahashi
  role: author
  orcid: https://orcid.org/0000-0003-2834-8300
- name: Wataru Norimatsu
  role: author
- name: Yasumitsu Miyata
  role: author
  orcid: https://orcid.org/0000-0002-9733-5119

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: transition metal dichalcogenide
  schema: not_defined
- subject: graphene/SiC
  schema: not_defined
- subject: van der Waals epitaxy
  schema: not_defined
- subject: strain engineering
  schema: not_defined
- subject: photoluminescence
  schema: not_defined
- subject: hydrogen evolution reaction
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in Nano Letters, copyright © 2025 American Chemical
    Society after peer review and technical editing by the publisher. To access the
    final edited and published work see https://doi.org/10.1021/acs.nanolett.5c02492.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-08-06
end_date: 2026-08-06

## Journal

- title: Nano Letters
  issn: '15306984'
  volume: '25'
  issue: '34'
  start_page: 12851
  end_page: 12858

## Conference



## Related item



## Funding

- identifier: JPMJFR213X
  funder_name: Fusion Oriented REsearch for disruptive Science and Technology
- funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMJCR23A4
  funder_name: Core Research for Evolutional Science and Technology
- funder_name: Tatematsu Foundation
- identifier: JPMJAX23DH
  funder_name: ACT-X
- identifier: JP21H05232
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21H05234
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22H00280
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22H00283
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22H04957
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22KJ1535
  funder_name: Japan Society for the Promotion of Science
- identifier: JP24H00044
  funder_name: Japan Society for the Promotion of Science
- identifier: JP24H01189
  funder_name: Japan Society for the Promotion of Science
- identifier: JP24K01347
  funder_name: Japan Society for the Promotion of Science
- identifier: JP24K17708
  funder_name: Japan Society for the Promotion of Science
- identifier: JP25H00835
  funder_name: Japan Society for the Promotion of Science
- identifier: JP25K17917
  funder_name: Japan Society for the Promotion of Science
- funder_name: Japan Science and Technology Agency
- funder_name: Research Foundation for the Electrotechnology of Chubu
- identifier: JPMJFR203K
  funder_name: Fusion Oriented REsearch for disruptive Science and Technology

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## Thumbnail

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filename: MANUSCRIPT_v9_F.pdf