# Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process

https://mdr.nims.go.jp/datasets/06a4771d-77e7-4d90-987d-22259ba19833

## File

- [Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf](https://mdr.nims.go.jp/filesets/7f1d3abc-0634-4705-80be-5f1e894de35f/download) ([Detail](https://mdr.nims.go.jp/filesets/7f1d3abc-0634-4705-80be-5f1e894de35f.md))

## Id

06a4771d-77e7-4d90-987d-22259ba19833

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-08-18T00:17:06.075052Z

## Updated at

2026-08-18T02:30:17.557644Z

## Published at

2026-08-18T03:27:23.041307Z

## Doi



## First published url

https://doi.org/10.1149/2162-8777/ae7ac0

## Date published

2026-06-01

## Recorded date published

2026-6-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified
    using the dummy-SiO2 process
  title_type: original
  lang: en

## Description

- description: "The characteristics of β-Ga2O3/Al2O3/Pt capacitors fabricated via
    the dummy-SiO2 (d-SiO2) process at 800 °C under O2 (D-O2), N2 (D-N2), and 3% H2
    (D-H2) atmospheres were investigated. The surface of Ga2O3 after the d-SiO2 process
    was as smooth as that after the sulfuric acid-hydrogen peroxide mixture treatment
    (Control). The flatband voltage (Vfb) hysteresis decreased as follows: Control
    (0.76 V) > D-H2 (0.56 V) > D-N2 (0.43 V) > D-O2 (0.37 V). The interface state
    density of the D-O2 capacitor was significantly reduced to 6 × 1011 cm−2eV−1 at
    −0.4 eV from conduction band. The Vfb shift caused by the electron traps according
    to the near-interface trap model under positive bias stress substantially improved
    for the capacitors fabricated by the d-SiO2 process. The poor characteristics
    of the Control capacitor are due to the presence of the unstable layer on the
    Ga2O3 surface. The improved electrical characteristic of the d-SiO2 capacitors
    is due to the modified Ga2O3 surface, which eliminated the unstable Ga2O3 layer.
    This is the result of hydrogen contained within the dummy SiO2 layer supporting
    the removal of Ga2O3. The difference in the decomposition reaction of Ga2O3 due
    to the atmosphere gas of the d-SiO2 process leads to differences in electrical
    properties.\r\n"
  description_type: abstract
  lang: eng

## Creator

- name: Toshihide Nabatame
  role: author
  orcid: https://orcid.org/0000-0002-5973-0230
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)
- name: Yoshihiro Irokawa
  role: author
  orcid: https://orcid.org/0000-0002-6531-4356
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Tomomi Sawada
  role: author
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor
    Materials Field/Thin Film Electronics Group
- name: Hiromi Miura
  role: author
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor
    Materials Field/Thin Film Electronics Group
- name: Manami Miyamoto
  role: author
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor
    Materials Field/Thin Film Electronics Group
- name: Takashi Onaya
  role: author
  orcid: https://orcid.org/0000-0002-2710-8623
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor
    Materials Field/Thin Film Electronics Group
- name: Yasuo Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Next-generation Semiconductor Group
- name: Kazuhito Tsukagoshi
  role: author
  orcid: https://orcid.org/0000-0001-9710-2692
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor
    Materials Field/Thin Film Electronics Group

## Contact agent



## Publisher

organization: The Electrochemical Society

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: atomic layer deposition
  schema: not_defined
- subject: dummy-SiO2
  schema: not_defined
- subject: Al2O3
  schema: not_defined
- subject: positive bias stress
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ECS Journal of Solid State Science and Technology
  issn: '21628777'
  volume: '15'
  issue: '6'

## Conference



## Related item



## Funding

- identifier: JPJ009777
  funder_name: NEXT
- identifier: JPMXP1223NM5088
  funder_name: ARIM

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 7f1d3abc-0634-4705-80be-5f1e894de35f
  filename: Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
  content_type: application/pdf
  size: 1878008
  md5: f1d8e282c843ca102e51bbc97f934cba

## Thumbnail

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filename: Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf