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論文 Observation of Integer and Fractional Quantum Anomalous Hall Effects in Twisted Bilayer MoTe 2

Fan Xu ; Zheng Sun ; Tongtong Jia ; Chang Liu ; Cheng Xu ; Chushan Li ; Yu Gu ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials ScienceROR) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials ScienceROR) ; Bingbing Tong ; Jinfeng Jia ; Zhiwen Shi ; Shengwei Jiang ; Yang Zhang ; Xiaoxue Liu ; Tingxin Li

コレクション

引用
Fan Xu, Zheng Sun, Tongtong Jia, Chang Liu, Cheng Xu, Chushan Li, Yu Gu, Kenji Watanabe, Takashi Taniguchi, Bingbing Tong, Jinfeng Jia, Zhiwen Shi, Shengwei Jiang, Yang Zhang, Xiaoxue Liu, Tingxin Li. Observation of Integer and Fractional Quantum Anomalous Hall Effects in Twisted Bilayer MoTe 2 . Physical Review X. 2023, 13 (3), 031037. https://doi.org/10.1103/physrevx.13.031037
SAMURAI

説明:

(abstract)

The interplay between strong correlations and topology can lead to the emergence of intriguing quantum states of matter. One well-known example is the factional quantum Hall effect, where exotic electron fluids with fractional charge excitations form in partially filled landau levels. The emergence of topological moiré flat bands provides exciting opportunities to realize the lattice analogs of both the integer and fractional quantum Hall states without the need for an external magnetic field. These states are known as the integer and fractional quantum anomalous Hall (IQAH and FQAH) states. Here, we present direct transport evidence of the existence of both IQAH and FQAH states in twisted bilayer MoTe2 (AA stacked). At zero magnetic field, we observe well-quantized Hall resistance of h/e2 around moiré filling factor ν = -1 (corresponding to one hole per moiré unit cell), and nearly-quantized Hall resistance of 3h/2e2 around ν = -2/3, respectively. Concomitantly, the longitudinal resistance exhibits distinct minima around ν = -1 and -2/3. The application of an electric field induces topological quantum phase transition from the IQAH state to a charge transfer insulator at ν = -1, and from the FQAH state to a generalized Wigner crystal state, further transitioning to a metallic state at ν = -2/3. Our study paves the way for the investigation of fractional charge excitations and anyon statistics at zero magnetic field based on semiconductor moiré materials.

権利情報:

キーワード: Fractional quantum Hall effect, topological moiré flat bands, MoTe2

刊行年月日: 2023-09-27

出版者: American Physical Society (APS)

掲載誌:

  • Physical Review X (ISSN: 21603308) vol. 13 issue. 3 031037

研究助成金:

  • National Key Research and Development Program of China 2022YFA1405400
  • National Key Research and Development Program of China 2022YFA1402702
  • National Key Research and Development Program of China 2022YFA1402404
  • National Key Research and Development Program of China 2021YFA1401400
  • National Natural Science Foundation of China 12141404
  • National Natural Science Foundation of China 12074244
  • Natural Science Foundation of Shanghai 22ZR1430900
  • Shanghai Jiao Tong University
  • University of Tennessee
  • National Science Foundation DMR-2309083
  • Japan Society for the Promotion of Science 21H05233
  • Japan Society for the Promotion of Science 23H02052
  • Innovation Program for Quantum Science and Technology 2021ZD0302600
  • Innovation Program for Quantum Science and Technology 2021ZD0302500
  • Pujiang Talent Program 22PJ1406700
  • World Premier International Research Center Initiative
  • National Key Research and Development Program of China 2021YFA1400100
  • National Key Research and Development Program of China 2021YFA1202902
  • National Key Research and Development Program of China 2019YFA0308600
  • National Natural Science Foundation of China 12174249
  • National Natural Science Foundation of China 92265102
  • National Natural Science Foundation of China 12174250

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1103/physrevx.13.031037

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更新時刻: 2025-02-28 16:30:30 +0900

MDRでの公開時刻: 2025-02-28 16:30:31 +0900

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