# Electron doping of exfoliated multilayer graphene induced by dissociative H2 adsorption due to long-term exposure to 80-bar H2 gas

https://mdr.nims.go.jp/datasets/067038c6-c98f-4984-af2c-9185efc8a100

## File

- [Electron doping of exfoliated multilayer graphene induced by dissociative H2 adsorption due to long-term exposure to 80-bar H2 gas.pdf](https://mdr.nims.go.jp/filesets/4b80632c-aa47-4040-a15c-1bf0a374d0c9/download) ([Detail](https://mdr.nims.go.jp/filesets/4b80632c-aa47-4040-a15c-1bf0a374d0c9.md))
- [Revised_Supporting_Information_Clean.pdf](https://mdr.nims.go.jp/filesets/4de312d4-99cc-4336-85f4-7359f535d49d/download) ([Detail](https://mdr.nims.go.jp/filesets/4de312d4-99cc-4336-85f4-7359f535d49d.md))
- [Revised_Supporting_Information_Highlighted.pdf](https://mdr.nims.go.jp/filesets/2228ec32-f704-4695-a712-957eec46fe46/download) ([Detail](https://mdr.nims.go.jp/filesets/2228ec32-f704-4695-a712-957eec46fe46.md))
- [STAM-2025-0517_data.zip](https://mdr.nims.go.jp/filesets/51d60b6f-4f5d-491e-bd8d-ca6e04258f9c/download) ([Detail](https://mdr.nims.go.jp/filesets/51d60b6f-4f5d-491e-bd8d-ca6e04258f9c.md))

## Id

067038c6-c98f-4984-af2c-9185efc8a100

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-09T02:59:22.228135Z

## Updated at

2026-02-10T03:30:21.035492Z

## Published at

2026-02-10T00:14:28.923739Z

## Doi

https://doi.org/10.48505/nims.6176

## First published url

https://doi.org/10.1080/14686996.2026.2627029

## Date published

2026-12-31

## Recorded date published

2026-12-31

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Electron doping of exfoliated multilayer graphene induced by dissociative
    H2 adsorption due to long-term exposure to 80-bar H2 gas
  title_type: original
  lang: en

## Description

- description: Semiconducting graphene is expected to replace silicon in the electronics
    industry, and various methods have been proposed for this purpose. In this study,
    we demonstrate that the long-term exposure of multilayer graphene to 80 bar of
    molecular hydrogen induces electron doping in graphene. Ambipolarity behavior
    disappeared, and the current in the transfer curves decreased and increased in
    the negative gate voltage (Vg) and positive Vg regions, respectively. The charge
    neutrality point shifted from 4.18 to over −80 V. Two resonant scatterings due
    to hydrogen adatoms were observed in the temperature-dependent transfer curves.
    For multilayer graphene with a boundary (edge), different behavior was observed
    in the transfer characteristics. Upon exposure to 80 bar of H2 pressure, the drain
    current of the time-dependent transfer curve rapidly decreased; however, it increased
    in the positive Vg region after 60 h of exposure to H2. Structural changes, particularly
    an increase in C‒H bonding, were observed using various characterization methods.
    These results were interpreted by the dissociative H2 adsorption of graphene.
    Molecular dynamics simulations also revealed the presence of electron doping due
    to dissociative adsorption. Furthermore, the simulations confirmed that dissociative
    adsorption occurred on the surface layer and at vacancies and defects.
  description_type: abstract
  lang: en

## Creator

- name: Hyun-Seok Jang
  role: author
  organization: Incheon National University
  department: a Department of Physics
- name: Younghun Kim
  role: author
- name: Heewoo Lee
  role: author
- name: Soo Bong Choi
  role: author
- name: Jeongwoo Kim
  role: author
- name: Byung Hoon Kim
  role: author

## Contact agent



## Publisher

organization: Taylor & Francis

## Managing organization



## Keyword

- subject: Multilayer graphene
  schema: not_defined
- subject: high H2 pressure
  schema: not_defined
- subject: dissociative H2 adsorption
  schema: not_defined
- subject: hydrogen electron-doped graphene
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '27'
  article_number: '2627029'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 4b80632c-aa47-4040-a15c-1bf0a374d0c9
  filename: Electron doping of exfoliated multilayer graphene induced by dissociative
    H2 adsorption due to long-term exposure to 80-bar H2 gas.pdf
  content_type: application/pdf
  size: 2526873
  md5: bff6e42e7dbfed6db42b12a8c5f84342
- id: 4de312d4-99cc-4336-85f4-7359f535d49d
  filename: Revised_Supporting_Information_Clean.pdf
  content_type: application/pdf
  size: 3388088
  md5: da5f7ac6ec80b0c914157010d5c65970
- id: 2228ec32-f704-4695-a712-957eec46fe46
  filename: Revised_Supporting_Information_Highlighted.pdf
  content_type: application/pdf
  size: 3390447
  md5: ced94136440dcf5b8238e34585971fab
- id: 51d60b6f-4f5d-491e-bd8d-ca6e04258f9c
  filename: STAM-2025-0517_data.zip
  content_type: application/zip
  size: 1223969
  md5: 827c00acdc2e6fb7779a8e11b0bd653e

## Thumbnail

fileset_id: 4b80632c-aa47-4040-a15c-1bf0a374d0c9
filename: Electron doping of exfoliated multilayer graphene induced by dissociative
  H2 adsorption due to long-term exposure to 80-bar H2 gas.pdf