# Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

https://mdr.nims.go.jp/datasets/05f22284-a6a8-4e15-ad4c-761a5e758e7c

## File

- [nohighlight_Sn_dopedGa2O3_240222_v2_revYY.pdf](https://mdr.nims.go.jp/filesets/872c854a-a49a-421b-8501-ced93b16d3db/download) ([Detail](https://mdr.nims.go.jp/filesets/872c854a-a49a-421b-8501-ced93b16d3db.md))

## Id

05f22284-a6a8-4e15-ad4c-761a5e758e7c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-03-18T02:35:24.998208Z

## Updated at

2024-03-19T03:30:20.075093Z

## Published at

2024-03-19T03:30:20.578827Z

## Doi

https://doi.org/10.48505/nims.4444

## First published url

https://doi.org/10.1063/5.0198160

## Date published

2024-03-11

## Recorded date published

2024-3-11

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Atomic position and the chemical state of an active Sn dopant for Sn-doped
    β-Ga2O3(001)
  title_type: original
  lang: en

## Description

- description: Snドープ β-Ga2O3(001)のドーパントの原子位置を光電子ホログラフィ法により明らかにした。
  description_type: abstract
  lang: und

## Creator

- name: Yuhua Tsai
  role: author
  orcid: https://orcid.org/0000-0001-7996-6681
  organization: National Institute for Materials Science
- name: Masaaki Kobata
  role: author
  orcid: https://orcid.org/0000-0002-9710-6308
- name: Tatsuo Fukuda
  role: author
  orcid: https://orcid.org/0000-0002-4832-5862
- name: Hajime Tanida
  role: author
  orcid: https://orcid.org/0009-0002-8468-7315
- name: Toru Kobayashi
  role: author
- name: Yoshiyuki Yamashita
  role: author
  orcid: https://orcid.org/0000-0003-0994-8095
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: dopant
  schema: not_defined
- subject: b-Ga2O3
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '124'
  issue: '11'

## Conference



## Related item



## Funding

- identifier: JPMXP1223AE0025
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 2023B-E09
  funder_name: Japan Atomic Energy Agency

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 872c854a-a49a-421b-8501-ced93b16d3db
  filename: nohighlight_Sn_dopedGa2O3_240222_v2_revYY.pdf
  content_type: application/pdf
  size: 726968
  md5: 0cce913df2b778d8f1d6a445ec4df4a0

## Thumbnail

fileset_id: 872c854a-a49a-421b-8501-ced93b16d3db
filename: nohighlight_Sn_dopedGa2O3_240222_v2_revYY.pdf