# Influence of Ge to the formation of defects in epitaxial Mg<sub>2</sub>Sn<sub>1−x               </sub>Ge<sub>                  x               </sub> thermoelectric thin films

https://mdr.nims.go.jp/datasets/058dd46d-c16c-4f28-9b27-af05a9a5a14c

## Files

- [Mg2Sn-1xGex_SSDM_Regular_Paper_v2-TM.docx](https://mdr.nims.go.jp/filesets/b86dd491-ec4b-4d7d-96fd-5635ad8ec75f/download) ([Detail](https://mdr.nims.go.jp/filesets/b86dd491-ec4b-4d7d-96fd-5635ad8ec75f.md))

## Id

058dd46d-c16c-4f28-9b27-af05a9a5a14c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-03-27T14:02:24.881293Z

## Updated at

2024-07-29T07:30:22.193676Z

## Published at

2024-07-29T07:30:22.257011Z

## Doi

https://doi.org/10.48505/nims.4610

## First published url

https://doi.org/10.35848/1347-4065/ad1259

## Date published

2024-02-29

## Recorded date published

2024-2-29

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Influence of Ge to the formation of defects in epitaxial Mg<sub>2</sub>Sn<sub>1−x               </sub>Ge<sub>                  x               </sub>
    thermoelectric thin films
  title_type: original
  lang: en

## Description

- description: Defect formation in epitaxial Mg2Sn1–xGex thermoelectric (TE) thin
    films grown via MBE was studied. We examined the defect formations and structures
    using cross-sectional transmission electron microscopy and positron annihilation
    spectroscopy. The defect formation tends to be influenced by Ge incorporation
    into the Mg2Sn matrix phase of epitaxial thin films. Mg vacancies (VMg) were identified
    as point defects, primarily concentrated in the film’s mid-layer. In films with
    higher Ge composition, stacking faults were observed. The concentration of vacancy-type
    point defects decreased as the Ge concentration increased. This implies that the
    vacancy atoms, which would have otherwise been created by increasing chemical
    pressure due to the higher Ge content, might have played a role in the formation
    of stacking faults. The high concentration of vacancy-type defects resulted in
    the lowest thermal conductivity, demonstrating their significance as effective
    phonon scattering centers in epitaxial TE films.
  description_type: abstract
  lang: und

## Creator

- name: Kenneth Magallon Senados
  role: author
  organization: National Institute for Materials Science
- name: Mariana S. L. Lima
  role: author
- name: Takashi Aizawa
  role: author
  orcid: https://orcid.org/0000-0003-2357-5336
  organization: National Institute for Materials Science
- name: Isao Ohkubo
  role: author
  orcid: https://orcid.org/0000-0002-4187-0112
  organization: National Institute for Materials Science
- name: Takahiro Baba
  role: author
  organization: National Institute for Materials Science
- name: Akira Uedono
  role: author
- name: Takeaki Sakurai
  role: author
- name: Takao Mori
  role: author
  orcid: https://orcid.org/0000-0003-2682-1846
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: thermoelectric
  schema: not_defined

## Rights

- description: This is the version of the article before peer review or editing, as
    submitted by an author to Japanese Journal of Applied Physics.  IOP Publishing
    Ltd is not responsible for any errors or omissions in this version of the manuscript
    or any version derived from it.  The Version of Record is available online at
    https://doi.org/10.35848/1347-4065/ad1259
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Japanese Journal of Applied Physics
  issn: '13474065'
  volume: '63'
  issue: '2'
  article_number: 02SP40

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## Fileset

- id: b86dd491-ec4b-4d7d-96fd-5635ad8ec75f
  filename: Mg2Sn-1xGex_SSDM_Regular_Paper_v2-TM.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 7533075
  md5: 5371c7a5abc14189061dec3a0fd7de86

## Thumbnail

fileset_id: b86dd491-ec4b-4d7d-96fd-5635ad8ec75f
filename: Mg2Sn-1xGex_SSDM_Regular_Paper_v2-TM.docx