# Impact of device resistances in the performance of graphene-based terahertz photodetectors

https://mdr.nims.go.jp/datasets/049ecb3a-e973-4961-9da9-35e27a662530

## File

- [s12200-024-00122-6.pdf](https://mdr.nims.go.jp/filesets/10c96e5e-faee-4874-8187-f8fa9351ea2b/download) ([Detail](https://mdr.nims.go.jp/filesets/10c96e5e-faee-4874-8187-f8fa9351ea2b.md))

## Id

049ecb3a-e973-4961-9da9-35e27a662530

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-07T10:23:06.900675Z

## Updated at

2026-02-14T12:12:38.144288Z

## Published at

2026-02-09T03:49:06.259234Z

## Doi



## First published url

https://doi.org/10.1007/s12200-024-00122-6

## Date published

2024-06-12

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Impact of device resistances in the performance of graphene-based terahertz
    photodetectors
  title_type: original
  lang: en

## Description

- description: In recent years, graphene Field-Effect-Transistors (GFETs) have demonstrated
    an outstanding potential for Terahertz (THz) photodetection due to their fast
    response and high-sensitivity. Such features are essential to enable emerging
    THz applications, including 6G wireless communications, quantum information, bioimaging
    and security. However, the overall performance of these photodetectors may be
    utterly compromised by the impact of internal resistances presented in the device,
    so-called access or parasitic resistances. In this work, we provide a detailed
    study of the influence of internal device resistances in the photoresponse of
    high-mobility dual-gate GFET detectors. Such dual-gate architectures allow us
    to fine tune (decrease) the internal resistance of the device by an order of magnitude
    and consequently demonstrate an improved responsivity and noise-equivalent-power
    values of the photodetector, respectively. Our results can be well understood
    by a series resistance model, as shown by the excellent agreement found between
    the experimental data and theoretical calculations. These findings are therefore
    relevant to understand and improve the overall performance of existing high-mobility
    graphene photodetectors.
  description_type: abstract
  lang: und

## Creator

- name: O. Castelló
  role: author
- name: Sofía M. López Baptista
  role: author
- name: K. Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: T. Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: E. Diez
  role: author
- name: J. E. Velázquez-Pérez
  role: author
- name: Y. M. Meziani
  role: author
- name: J. M. Caridad
  role: author
- name: J. A. Delgado-Notario
  role: author

## Contact agent



## Publisher

organization: Higher Education Press

## Managing organization



## Keyword

- subject: graphene photodetectors
  schema: not_defined
- subject: 'terahertz (THz)
    '
  schema: not_defined
- subject: " internal resistance"
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2024-06-12

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Frontiers of Optoelectronics
  issn: '20952759'
  volume: '17'
  issue: '1'
  article_number: '19'

## Conference



## Related item



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## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

- id: 10c96e5e-faee-4874-8187-f8fa9351ea2b
  filename: s12200-024-00122-6.pdf
  content_type: application/pdf
  size: 5453820
  md5: 116cf0b135ea894b821c5bd3dbf28d39

## Thumbnail

fileset_id: 10c96e5e-faee-4874-8187-f8fa9351ea2b
filename: s12200-024-00122-6.pdf