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説明:

In recent years, graphene Field-Effect-Transistors (GFETs) have demonstrated an outstanding potential for Terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications, including 6G wireless communications, quantum information, bioimaging and security. However, the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device, so-called access or parasitic resistances. In this work, we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors. Such dual-gate architectures allow us to fine tune (decrease) the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector, respectively. Our results can be well understood by a series resistance model, as shown by the excellent agreement found between the experimental data and theoretical calculations. These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: graphene photodetectors, terahertz (THz)
, internal resistance

刊行年月日: 2024-06-12

出版者: Higher Education Press

掲載誌:

• Frontiers of Optoelectronics (ISSN: 20952759) vol. 17 issue. 1 19

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1007/s12200-024-00122-6

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更新時刻: 2026-02-14 21:12:38 +0900

MDRでの公開時刻: 2026-02-09 12:49:06 +0900