# Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures

https://mdr.nims.go.jp/datasets/0288eb8c-f9ca-4ae1-bbb7-b6f56f2c34ff

## Download

- [Revised Manuscript2.docx](https://mdr.nims.go.jp/filesets/c3792f41-60b8-471a-b6ad-43ce85c97551/download)
- [Supplemental data 4.docx](https://mdr.nims.go.jp/filesets/128984ce-7e72-4e8b-896d-4980534b8b6a/download)

## Id

0288eb8c-f9ca-4ae1-bbb7-b6f56f2c34ff

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-09-17T01:31:09.190487Z

## Updated at

2025-09-17T07:30:34.730039Z

## Published at

2025-09-17T07:19:20.684779Z

## Doi

https://doi.org/10.48505/nims.5767

## First published url

https://doi.org/10.1063/5.0283133

## Date published

2025-09-08

## Recorded date published

2025-9-8

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Effect of strain-induced defects in GaN channel on two-dimensional carrier
    transport in AlGaN/GaN heterostructures
  title_type: original
  lang: en

## Description

- description: To improve the mobility of two-dimensional electron gas (2DEG) in an
    AlGaN/GaN heterostructure grown by metalorganic chemical vapor deposition, we
    characterized the defect distribution around the interface with and without an
    AlN interlayer by the steady-state photocapacitance method under controlling the
    bias voltage and incident photon energy. For samples without the AlN interlayer,
    the defects in the GaN channel layer near the heterointerface were induced by
    the strain from the Al1-xGaxN barrier depending on the AlN mol fraction. The density
    of strain-induced defects was markedly increased near the conduction band minimum
    to 1×1018 cm-3 peaked at a depth of ~10 nm from the heterointerface for the Al0.24Ga0.76N/GaN
    sample. The AlN interlayer was confirmed to suppress the formation of strain-induced
    defects. The carrier mobility evaluated by magneto transport measurements was
    also improved clearly in samples with the AlN layer because of the reduction in
    the density of strain-induced defects leading to remote 2DEG scattering. We have
    clarified the correlation between the density of strain-induced defects and the
    2DEG mobility for a comprehensive understanding of the carrier transport in strained
    heterostructures.
  description_type: abstract
  lang: und

## Creator

- name: Masatomo Sumiya
  role: author
  orcid: https://orcid.org/0000-0003-0960-3812
  organization: National Institute for Materials Science
- name: Yasutaka Imanaka
  role: author
  orcid: https://orcid.org/0000-0003-2804-4438
  organization: National Institute for Materials Science
- name: Yoshitaka Nakano
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: AlGaN/GaN heterostructure
  schema: not_defined
- subject: two-dimensional electron gas
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Masatomo Sumiya, Yasutaka Imanaka, Yoshitaka Nakano; Effect of strain-induced
    defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures.
    Appl. Phys. Lett. 8 September 2025; 127 (10): 101602 and may be found at https://doi.org/10.1063/5.0283133.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '127'
  issue: '10'
  article_number: '101602'

## Conference



## Related item



## Funding

- funder_name: National Institute for Materials Science

## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

- id: c3792f41-60b8-471a-b6ad-43ce85c97551
  filename: Revised Manuscript2.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 1240871
  md5: e03906d28966d08f7eb90244550ba63b
- id: 128984ce-7e72-4e8b-896d-4980534b8b6a
  filename: Supplemental data 4.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 665563
  md5: 42713527ffbfb2dd0851ef4113504534

## Thumbnail

fileset_id: c3792f41-60b8-471a-b6ad-43ce85c97551
filename: Revised Manuscript2.docx