# Electrically Confined Electroluminescence of Neutral Excitons in WSe<sub>2</sub> Light‐Emitting Transistors

https://mdr.nims.go.jp/datasets/026057c2-3729-4de6-8b87-0de3535c1e8b

## File

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## Id

026057c2-3729-4de6-8b87-0de3535c1e8b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-14T00:22:02.377786Z

## Updated at

2025-07-30T07:30:26.259727Z

## Published at

2025-07-30T07:18:00.070241Z

## Doi



## First published url

https://doi.org/10.1002/adma.202310498

## Date published

2024-01-08

## Recorded date published

2024-4

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Electrically Confined Electroluminescence of Neutral Excitons in WSe<sub>2</sub>
    Light‐Emitting Transistors
  title_type: original
  lang: en

## Description

- description: Monolayer transition metal dichalcogenides (TMDs) show significant
    promise as excellent options for optoelectronic applications due to their direct
    band gap and exceptional quantum yield. However, light-emitting devices based
    on TMD channels have shown low external quantum efficiencies due to the high contact
    barrier hindering carrier injection, the inevitable doping of the TMDs, and the
    non-radiative recombination of charged excitons, thus collectively imposing restrictions
    on their practical applications. Here, we demonstrate electrically confined electroluminescence
    of neutral excitons in WSe2 light-emitting transistors (LETs) based on the van
    der Waals (vdW) heterostructure. The WSe2 channel is doped locally to simultaneously
    inject electrons and holes to the one-dimensional (1D) pn junction region by a
    local graphene gate. At balanced concentrations of injected electrons and holes,
    the WSe2 LETs exhibited strong electroluminescence with a high external quantum
    efficiency (EQE) of ~8.2% at room temperature. Our calculations show that the
    neutral excitons are confined electrically in the 1D region of WSe2, and charged
    excitons are expelled toward corresponding doped regions with low potentials by
    charge interaction and the in-plane electric field along the edge of the graphene
    gate. Our work shows a potential way to electrically confine neutral excitons
    in the 2D light-emitting transistors and modulate the recombination of exciton
    complexes for excitonic devices.
  description_type: abstract
  lang: und

## Creator

- name: June‐Chul Shin
  role: author
- name: Jae Hwan Jeong
  role: author
- name: Junyoung Kwon
  role: author
- name: Yeon Ho Kim
  role: author
- name: Bumho Kim
  role: author
- name: Seung‐Je Woo
  role: author
- name: Kie Young Woo
  role: author
- name: Minhyun Cho
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Young Duck Kim
  role: author
- name: Yong‐Hoon Cho
  role: author
- name: Tae‐Woo Lee
  role: author
- name: James Hone
  role: author
- name: Chul‐Ho Lee
  role: author
- name: Gwan‐Hyoung Lee
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Transition metal dichalcogenides
  schema: not_defined
- subject: light-emitting devices
  schema: not_defined
- subject: quantum efficiency
  schema: not_defined

## Rights

- description: "  This is the peer reviewed version of the following article: J.-C.
    Shin, J. H. Jeong, J. Kwon, Y. H. Kim, B. Kim, S.-J. Woo, K. Y. Woo, M. Cho, K.
    Watanabe, T. Taniguchi, Y. D. Kim, Y.-H. Cho, T.-W. Lee, J. Hone, C.-H. Lee, G.-H.
    Lee, Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting
    Transistors. Adv. Mater. 2024, 36, 2310498, which has been published in final
    form at https://doi.org/10.1002/adma.202310498. This article may be used for non-commercial
    purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived
    Versions. This article may not be enhanced, enriched or otherwise transformed
    into a derivative work, without express permission from Wiley or by statutory
    rights under applicable legislation. Copyright notices must not be removed, obscured
    or modified. The article must be linked to Wiley’s version of record on Wiley
    Online Library and any embedding, framing or otherwise making available the article
    or pages thereof by third parties from platforms, services and websites other
    than Wiley Online Library must be prohibited."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-01-03
end_date: 2025-01-03

## Journal

- title: Advanced Materials
  issn: '15214095'
  volume: '36'
  issue: '14'
  article_number: '2310498'

## Conference



## Related item



## Funding

- funder_name: National Research Foundation of Korea
- funder_name: Seoul National University
- funder_name: National Center for Inter-University Research Facilities, Seoul National
    University
- identifier: 2021R1A2C3014316
  funder_name: LG Display
- funder_name: Institute of Engineering Research, Seoul National University

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## Fileset

- id: 7f434e5e-66a2-45ec-ba99-cbe8b9487ded
  filename: 2024A00653G_Adv Mater_Electrically Confined Electroluminescence.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 1966485
  md5: 10673eefca184ecca1754f9c5b81995e

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filename: 2024A00653G_Adv Mater_Electrically Confined Electroluminescence.docx