# Light sources with bias tunable spectrum based on van der Waals interface transistors

https://mdr.nims.go.jp/datasets/01ceff04-9ea5-48cd-b813-57babfdf752f

## File

- [s41467-022-31605-9.pdf](https://mdr.nims.go.jp/filesets/47051f02-eb7b-4385-bc64-764fb07138d0/download) ([Detail](https://mdr.nims.go.jp/filesets/47051f02-eb7b-4385-bc64-764fb07138d0.md))

## Id

01ceff04-9ea5-48cd-b813-57babfdf752f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-26T07:15:00.165237Z

## Updated at

2025-02-27T03:31:04.449349Z

## Published at

2025-02-27T03:31:04.542550Z

## Doi



## First published url

https://doi.org/10.1038/s41467-022-31605-9

## Date published

2022-07-07

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Light sources with bias tunable spectrum based on van der Waals interface
    transistors
  title_type: original
  lang: en

## Description

- description: Light-emitting electronic devices are ubiqui- tous in key areas of
    current technology, such as data communications, solid-state lighting, displays,
    and optical interconnects. Controlling the spectrum of the emitted light electrically,
    by simply acting on the device bias conditions, is an important goal with potential
    technological repercussions. However, identifying a mate- rial platform enabling
    broad electrical tuning of the spectrum of electroluminescent devices is difficult.
    Here, we propose light-emitting field-effect transistors based on van der Waals
    interfaces of atomically thin semiconductors as a promising class of devices to
    achieve this goal. We demonstrate that large spectral changes in room-temperature
    electroluminescence can be controlled both at the device assembly stage –by suitably
    selecting the material forming the interfaces– and on-chip, by changing the bias
    to modify the device operation point. As the physical mechanism responsible for
    light emission is robust and does not depend on details of the interfaces, these
    structures are compatible with simple large areas device production methods.
  description_type: abstract
  lang: und

## Creator

- name: Hugo Henck
  role: author
- name: Diego Mauro
  role: author
- name: Daniil Domaretskiy
  role: author
- name: Marc Philippi
  role: author
- name: Shahriar Memaran
  role: author
- name: Wenkai Zheng
  role: author
- name: Zhengguang Lu
  role: author
- name: Dmitry Shcherbakov
  role: author
- name: Chun Ning Lau
  role: author
- name: Dmitry Smirnov
  role: author
- name: Luis Balicas
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Vladimir I. Fal’ko
  role: author
- name: Ignacio Gutiérrez-Lezama
  role: author
- name: Nicolas Ubrig
  role: author
- name: Alberto F. Morpurgo
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Light-emitting
  schema: not_defined
- subject: field-effect transistors
  schema: not_defined
- subject: electroluminescence
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Nature Communications
  issn: '20411723'
  volume: '13'
  issue: '1'
  article_number: '3917'

## Conference



## Related item



## Funding

- identifier: Division II
  funder_name: Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen
    Forschung

## Instrument



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## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Computational method



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## Fileset

- id: 47051f02-eb7b-4385-bc64-764fb07138d0
  filename: s41467-022-31605-9.pdf
  content_type: application/pdf
  size: 1638315
  md5: f172fadfd932b7a23bd9337508751371

## Thumbnail

fileset_id: 47051f02-eb7b-4385-bc64-764fb07138d0
filename: s41467-022-31605-9.pdf