# Gate tuning of coupled electronic and structural phase transition in atomically thin Ta2NiSe5

https://mdr.nims.go.jp/datasets/00a40184-54d7-4084-9b8c-d61c4c0c5231

## File

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## Id

00a40184-54d7-4084-9b8c-d61c4c0c5231

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-15T08:07:19.738651Z

## Updated at

2026-02-17T03:30:48.839567Z

## Published at

2026-02-17T00:10:56.934815Z

## Doi



## First published url

https://doi.org/10.1038/s41467-025-66594-y

## Date published

2025-12-09

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Gate tuning of coupled electronic and structural phase transition in atomically
    thin Ta2NiSe5
  title_type: original
  lang: en

## Description

- description: Realizing an excitonic insulator phase from narrow-gap semiconductors
    remains challenging, as unambiguous experimental signatures are difficult to establish.
    Ta2NiSe5 has been widely regarded as a leading candidate, yet the nature of its
    phase transition and insulating state remains controversial. Here, we report a
    systematic Raman spectroscopy study of Ta2NiSe5 as a function of thickness and
    field-effect doping, complemented by electrical transport measurements. The phase
    transition persists down to the monolayer limit, with the critical temperature
    increasing as thickness decreases. In bilayer samples, both electron and hole
    doping suppress the insulating state, with electron doping lowering and hole doping
    raising the critical temperature. Importantly, the quasi-elastic scattering, previously
    attributed to excitonic fluctuations, evolves monotonically across the entire
    doping range. These findings suggest that the insulating state arises from a coupled
    electronic and structural phase transition, with its stability tunable by carrier
    doping. This doping approach provides a pathway to assess the role of electronic
    interactions in candidate excitonic insulator materials.
  description_type: abstract
  lang: und

## Creator

- name: Keyu Wei
  role: author
- name: Yixuan Luo
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Yanfeng Guo
  role: author
- name: Xiaoxiang Xi
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: 'Ta2NiSe5
    '
  schema: not_defined
- subject: phase transition
  schema: not_defined
- subject: excitonic insulator
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/
  date_licensed: 2025-12-09

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Nature Communications
  issn: '20411723'
  volume: '16'
  issue: '1'
  article_number: '10999'

## Conference



## Related item



## Funding

- funder_name: National Key Research and Development Program of China

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: f27ea5a9-c6aa-47b5-b937-0f188f8a72b2
  filename: s41467-025-66594-y.pdf
  content_type: application/pdf
  size: 2176782
  md5: 3e1208b820204c40e1b275f7b65bfa59

## Thumbnail

fileset_id: f27ea5a9-c6aa-47b5-b937-0f188f8a72b2
filename: s41467-025-66594-y.pdf