# Quantum octets in high mobility pentagonal two-dimensional PdSe2

https://mdr.nims.go.jp/datasets/002a17fa-cac0-4ef7-9c0f-f1ac0835c04d

## File

- [s41467-024-44972-2.pdf](https://mdr.nims.go.jp/filesets/0c1838e9-6103-4a8e-a4bf-d4ec66c0e651/download) ([Detail](https://mdr.nims.go.jp/filesets/0c1838e9-6103-4a8e-a4bf-d4ec66c0e651.md))

## Id

002a17fa-cac0-4ef7-9c0f-f1ac0835c04d

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-07T06:26:39.828218Z

## Updated at

2025-02-08T03:30:27.893149Z

## Published at

2025-02-08T03:30:28.018232Z

## Doi



## First published url

https://doi.org/10.1038/s41467-024-44972-2

## Date published

2024-01-26

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Quantum octets in high mobility pentagonal two-dimensional PdSe2
  title_type: original
  lang: en

## Description

- description: 'Two-dimensional (2D) materials have drawn immense interests in scientific
    and technological communities, owing to their extraordinary properties that are
    profoundly altered from their bulk counterparts and their enriched tunability
    by gating, proximity, strain and external fields. For digital applications, an
    ideal 2D material would have high mobility, air stability, sizable band gap, and
    be compatible with large scale synthesis. Here we demonstrate air stable field
    effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched
    between hexagonal BN (hBN), with record high saturation current >350 µA/µm, and
    field effect mobility 700 cm2/Vs and 10,000 at 300K and 2K, respectively. At low
    temperatures, magnetotransport studies reveals unique octets in quantum oscillations,
    arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by
    in-plane and out-of-plane magnetic fields. '
  description_type: abstract
  lang: und

## Creator

- name: Yuxin Zhang
  role: author
- name: Haidong Tian
  role: author
- name: Huaixuan Li
  role: author
- name: Chiho Yoon
  role: author
- name: Ryan A. Nelson
  role: author
- name: Ziling Li
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Dmitry Smirnov
  role: author
- name: Roland K. Kawakami
  role: author
- name: Joshua E. Goldberger
  role: author
- name: Fan Zhang
  role: author
- name: Chun Ning Lau
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: 2D materials
  schema: not_defined
- subject: field effect transistors
  schema: not_defined
- subject: PdSe2
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Nature Communications
  issn: '20411723'
  volume: '15'
  issue: '1'
  article_number: '761'

## Conference



## Related item



## Funding

- identifier: DMR 2128945
  funder_name: National Science Foundation
- identifier: FA9550-21-1-02684
  funder_name: United States Department of Defense | United States Air Force | AFMC
    | Air Force Office of Scientific Research
- identifier: FA9550-19-1-0390
  funder_name: United States Department of Defense | United States Air Force | AFMC
    | Air Force Office of Scientific Research

## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

- id: 0c1838e9-6103-4a8e-a4bf-d4ec66c0e651
  filename: s41467-024-44972-2.pdf
  content_type: application/pdf
  size: 2357955
  md5: a6202feb740c701249c0f1a51aa6a778

## Thumbnail

fileset_id: 0c1838e9-6103-4a8e-a4bf-d4ec66c0e651
filename: s41467-024-44972-2.pdf