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Asymmetric transition of electrical resistance in an all-solid-state redox device with Fe3O4 and Li-ion electrolyte thin films for physical reservoir computing

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In recent years, ion-gating devices have been used in artificial neuromorphic computing and achieved high performance for time-series data processing. However, the origin of such performance still needs to be clarified. In this study, we fabricated an all-solid-state redox device with functional material Fe3O4 and Li-ion conducting solid electrolytes, and the transient response of the electrical resistance of the Fe3O4 thin film to time-series data input was investigated. The transition between high and low electrical resistance states was asymmetry, and residual Li-ion in the thin film led to a hysteresis effect. These unique features, which is induced by ion-electron dynamics coupling, contributes to the high performance of physical reservoir computing utilizing ion-gating device.

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  • 01/03/2024
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  • This is the version of the article before peer review or editing, as submitted by an author to Japanese Journal of Applied Physics.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://dx.doi.org/10.35848/1347-4065/ad1fb0
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  • Author's original (Preprint)
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