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Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction

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Position-dependent three-dimensional reciprocal space mapping (RSM) by nanobeam x-ray diffraction (nanoXRD) was performed to reveal the strain fields produced around individual threading dislocations (TDs) in GaN substrates. The distribution and Burgers vector of TDs for the nanoXRD measurements were confirmed by prerequisite analysis of multi-photon excited photoluminescence and etch pit methods.

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  • 14/06/2024
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  • Funder identifier
    J121052565
    Funder name
    Japan Science and Technology Agency
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    Murata Science and Education Foundation
    Funder identifier
    JP16H06423
    Funder name
    Ministry of Education, Culture, Sports, Science and Technology

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Hamachi 2024 JAP GaN dislocation nanoXRD Na-flux HVPE MDR.pdf 3.91 MB MDR Open