%0 Publication %T Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder %A Ogiwara, Toshiya; Nagatomi, Takaharu; Tanuma, Shigeo; Kim, Kyung Joong %8 08/09/2021 %I The Surface Science Society of Japan %U https://mdr.nims.go.jp/concern/publications/sj139475v %( https://doi.org/10.1380/jsssj.32.664 %X We developed a 85°-high-angle inclined specimen holder which enabled the specimen surface to be irradiated by both electron and ion beams at the glancing incidence. We have investigated the high depth resolution Auger depth profiling analysis with the inclined specimen holder. In consequence, the resulting depth resolution for the GaAs/AlAs superlattice was found to be independent of the sputtered depth. The highest depth resolution of 1.7 nm was achieved with the Al-LVV Auger peak. The Auger depth profiles of the Si/Ge multiple delta-doped layers revealed that the Ge monolayer can be measured in-depth profiled with high sensitivity using this inclined specimen holder. %G Japanese %[ 08/09/2021 %9 Article %K Auger Depth Profiling Analysis; Inclined Holder; GaAs/AlAs Superlattice; Si/Ge multiple delta-doped layers %~ MDR: NIMS Materials Data Repository %W National Institute for Materials Science