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Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors
MDR Open Deposited
High-performance boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated. Drain current maximum values for the B-diamond MOSFETs working at room temperature (RT) and 300 °C are −1.2 and −10.9 mA/mm, respectively. Both of them show on/off ratios higher than 109 and their extrinsic transconductance maximum values are 29.0 and 215.7 μS/mm, respectively. These properties are better than those of the previous reported values for the B-diamond MOSFETs. This study is meaningful to push forward the development of diamond-based MOSFETs for high-temperature applications.
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- 12/02/2024
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- This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. W. Liu, T. Teraji, B. Da, Y. Koide; Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors. Appl. Phys. Lett. 12 February 2024; 124 (7): 072103 and may be found at https://doi.org/10.1063/5.0194424.
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- Author's original (Preprint)
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