Luminescence properties of dislocations in α-Ga<sub>2</sub>O<sub>3</sub>

Mugove Maruzane; Yuichi Oshima; Olha Makydonska; Paul R Edwards; Robert W Martin; Fabien C-P Massabuau

Publication

Luminescence properties of dislocations in α-Ga₂O₃

MDR Open Deposited

Analytics

Download PDF

Download This Work (Zip)

Citations

Dislocations in epitaxial lateral overgrown α-Ga2O3 are investigated using hyperspectral
cathodoluminescence spectroscopy. The dislocations are associated with a reduction of
self-trapped hole-related luminescence (ca. 3.6 eV line) which can be ascribed to their actions as non-radiative recombination sites for free electrons, to a reduction in free electron density due to Fermi level pinning or to electron trapping at donor states. An increase in the intensity of the ca. 2.8 eV and 3.2 eV lines are observed at the dislocations, suggesting an increase in donor–acceptor pair transitions and providing strong evidence that point defects segregate at dislocations.

First published at