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Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation
Copper(I) iodide, CuI, is the leading p-type non-toxic and earth-abundant semiconducting material for transparent electronics and thermoelectric generators. The power factor of thin film CuI was increased from 332pm32 μWm-1K-2 to 578pm58 μWm-1K-2 after implantation with noble gas ions (Ne, Ar, Xe). The increased power factor is due to a decoupling of the Seebeck coeffcient and carrier concentration identified through a changing scattering mechanism. Ion implantation causes the abundant production of Frenkel pairs, which were found to to suppress compensating donors in CuI, studied using density functional theory calculations.
The compensating donor suppression led to a significantly improved Hall carrier concentration, increasing from 6:5 x 1019 pm 0:1 x 1019 cm-3 to 11:5 x 1019 pm 0:4 x 1019 cm-3. This work provides an important step forward in the development of CuI as a transparent conducting material for electronics and thermoelectric generators by introducing beneficial point defects with ion implantation.
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- 18/11/2024
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- This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Martin Markwitz, Peter P. Murmu, Takao Mori, John V. Kennedy, Ben J. Ruck; Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation. Appl. Phys. Lett. 18 November 2024; 125 (21): 213901 and may be found at https://doi.org/10.1063/5.0233754.
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