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Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
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In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge-neutral valley currents. We report valley currents in hBN/bilayer-graphene heterostructures with an energy gap, which is tunable by a perpendicular electric (displacement) field in a dual-gated structure. We observed significant nonlocal resistance, consistent with the scaling theory of the valley Hall effect. In the low-temperature limit, the nonlocal resistance approaches a saturated value near the “quantum limit,” indicating the emergence of quantum valley currents.
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- 08/02/2024
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- ©2024 American Physical Society
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VHEforMDR.pdf | 1.12 MB | MDR Open |
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VHE_MDR.pdf | 1.12 MB | MDR Open |
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