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表面電子分光法における信号の減衰は如何に記述されるか？ V. 誘電関数を用いた固体における電子の非弾性散乱断面積
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Raw data files for Fig. 12 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
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PoLyInfoと機械学習
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Sulfonation Properties of Polyphenylsulfone
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Raw data files for Fig. 11 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
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SuperCon RDF Ver. 1.1
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電子の非弾性平均自由行程の一般式:JTP 式の開発
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10eV - 30 keVにおける固体中の電子阻止能の計算
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モノづくりを支える表面分析技術: 表面分析の現状とその課題
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Calculations of Electron Inelastic Mean Free Paths in Solids over the 10 eV to 200 keV Energy Range with the Relativistic Full Penn Algorithm
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