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Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Description/Abstract:
GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...
Keyword:
atom probe tomography
,
gallium nitride
, and
transmission electron microscopy
Resource Type:
ProceedingsArticle
Author:
Ryo Tanaka
,
Shinya Takashima
,
Katsunori Ueno
,
Masahiro Horita
,
Jun Suda
,
Jun Uzuhashi
,
Tadakatsu Ohkubo
, and
Masaharu Edo
Date Uploaded:
19/04/2024
Diamond Metal-Oxide-Semiconductor Field-effect Transistors on a Large-area Wafer
Description/Abstract:
Diamond-based devices are suitable for high-power, low power-loss, high-frequency, and high-temperature applications. Most of diamond-bas...
Keyword:
diamond
Resource Type:
ProceedingsArticle
Author:
Jiangwei Liu
,
Hirotaka Ohsato
,
Bo Da
, and
Yasuo Koide
Date Uploaded:
27/02/2024
Identification of gas species and their concentrations by using sorption kinetics of viscoelastic film
Description/Abstract:
Nanomechanical sensors and their arrays have been attracting significant attention for detecting, distinguishing, and identifying target ...
Keyword:
nanomechanical sensors
and
sorption kinetics
Resource Type:
Proceeding
Author:
Kosuke Minami
,
Kota Shiba
,
Gaku Imamura
, and
Genki Yoshikawa
Date Uploaded:
28/07/2023
High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
Description/Abstract:
In this paper, planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transis...
Keyword:
Diamond
,
MOSFET
, and
triple-gate
Resource Type:
Article
Author:
LIU, Jiangwei
,
OOSATO, Hirotaka
,
DA, Bo
, and
KOIDE, Yasuo
Date Uploaded:
28/02/2023
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