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Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
Description/Abstract:
Enhancement of energy resolution due to evolution of monochromators has made electron energy loss spectroscopy (EELS) in transmission ele...
Keyword:
4D-STEM
,
ABF-STEM
,
EELS
,
GaN
,
HAADF-STEM
,
HAXPES
, and
defect
Resource Type:
Article
Author:
Shunsuke Yamashita
,
Sei Fukushima
,
Jun Kikkawa
,
Ryoji Arai
,
Yuya Kanitani
,
Koji Kimoto
, and
Yoshihiro Kudo
Journal:
APL Materials
Date Uploaded:
19/03/2024
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
Description/Abstract:
Snドープ β-Ga2O3(001)のドーパントの原子位置を光電子ホログラフィ法により明らかにした。
Keyword:
Ga2O3
,
b-Ga2O3
, and
dopant
Resource Type:
Article
Author:
Yuhua Tsai
,
Masaaki Kobata
,
Tatsuo Fukuda
,
Hajime Tanida
,
Toru Kobayashi
, and
Yoshiyuki Yamashita
Journal:
Applied Physics Letters
Date Uploaded:
19/03/2024
Perspective on nanoscale magnetic sensors using giant anomalous Hall effect in topological magnetic materials for read head application in magnetic recording
Description/Abstract:
Recent advances in the study of materials with topological electronic band structures have revealed magnetic materials exhibiting giant a...
Keyword:
Weyl semimetal
,
anomalous Hall effect
,
magnetic recording
,
magnetic sensors
,
read head
, and
topological materials
Resource Type:
Article
Author:
Tomoya Nakatani
,
Prabhanjan D. Kulkarni
,
Hirofumi Suto
,
Keisuke Masuda
,
Hitoshi Iwasaki
, and
Yuya Sakuraba
Journal:
Applied Physics Letters
Date Uploaded:
26/02/2024
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>
Description/Abstract:
We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 st...
Keyword:
ELO
,
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Shingo Yagyu
, and
Takashi Shinohe
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...
Keyword:
HVPE
,
ε-Ga2O3
, and
κ-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
,
Yoshitaka Matsushita
,
Satoshi Yamamoto
, and
Kiyoshi Shimamura
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Description/Abstract:
ScClxとNH3との反応によるHVPEでScNを育成した。成長速度は、原料分圧の増大に伴って最初は増加するが、やがて減少に転じ、最大成長速度は5um/h程度であった。基板は種々試みたが、サファイア(10-12)と(10-10)を用いたときに単一配向のScN(100)および...
Keyword:
HVPE
and
ScN
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
, and
Kiyoshi Shimamura
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
We demonstrated epitaxial lateral overgrowth of a-Ga2O3 by halide vapor phase epitaxy. We formed stripe patterned or triangular lattice d...
Keyword:
ELO
,
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Y. Oshima
,
K. Kawara
,
T. Shinohe
,
T. Hitora
,
M. Kasu
, and
S. Fujita
Journal:
APL MATERIALS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
Description/Abstract:
パワー、およびUV応用を指向したα型酸化ガリウムの関連技術の現状と技術課題を俯瞰し、今後の展望を述べる。
Keyword:
epitaxy
,
power device
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
and
Elaheh Ahmadi
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
Materials issues and devices of α- and β-Ga2O3
Description/Abstract:
パワーデバイスに向けたα- および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。
Keyword:
Ga2O3
,
epitaxy
, and
power device
Resource Type:
Article
Author:
Elaheh Ahmadi
and
Yuichi Oshima
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
Permanent-magnet-based transverse thermoelectric generator with high fill factor driven by anomalous Nernst effect
Description/Abstract:
A transverse thermoelectric generator for magnetic-field-free and high-density power generation utilizing the anomalous Nernst effect is ...
Keyword:
Energy harvesting
,
Infrared imaging
,
Magnetic materials
,
Thermoelectric effects
, and
Thermoelectric generator
Resource Type:
Article
Author:
Fuyuki Ando
,
Takamasa Hirai
, and
Ken-ichi Uchida
Journal:
APL Energy
Date Uploaded:
26/01/2024
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HVPE
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26
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Creative Commons BY Attribution 4.0 International
14
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11
Material/Specimen
nitrides
1
Date
2018
2
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Yuichi Oshima
6
Jun Uzuhashi
4
Tadakatsu Ohkubo
4
Ashutosh Kumar
2
Elaheh Ahmadi
2
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Ministry of Education, Culture, Sports, Science and Technology
2
Cabinet Office, Government of Japan
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Core Research for Evolutional Science and Technology
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JOURNAL OF APPLIED PHYSICS
9
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3
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