Index Catalog // MDR

Description/Abstract:: A symmetry-protected bound state in the continuum (BIC) is one of the bases for high-resolution photonic refractometric sensors that rely...
Keyword:: BIC, biosensors, bound states in the continuum, and metasurfaces
Resource Type:: Article
Author:: Keisuke Watanabe and Masanobu Iwanaga
Journal:: Applied Physics Letters
Date Uploaded:: 03/04/2024

Description/Abstract:: Enhancement of energy resolution due to evolution of monochromators has made electron energy loss spectroscopy (EELS) in transmission ele...
Keyword:: 4D-STEM, ABF-STEM, EELS, GaN, HAADF-STEM, HAXPES, and defect
Resource Type:: Article
Author:: Shunsuke Yamashita, Sei Fukushima, Jun Kikkawa, Ryoji Arai, Yuya Kanitani, Koji Kimoto, and Yoshihiro Kudo
Journal:: APL Materials
Date Uploaded:: 19/03/2024

Description/Abstract:: Snドープ β-Ga2O3(001)のドーパントの原子位置を光電子ホログラフィ法により明らかにした。
Keyword:: Ga2O3, b-Ga2O3, and dopant
Resource Type:: Article
Author:: Yuhua Tsai, Masaaki Kobata, Tatsuo Fukuda, Hajime Tanida, Toru Kobayashi, and Yoshiyuki Yamashita
Journal:: Applied Physics Letters
Date Uploaded:: 19/03/2024

Description/Abstract:: Recent advances in the study of materials with topological electronic band structures have revealed magnetic materials exhibiting giant a...
Keyword:: Weyl semimetal, anomalous Hall effect, magnetic recording, magnetic sensors, read head, and topological materials
Resource Type:: Article
Author:: Tomoya Nakatani, Prabhanjan D. Kulkarni, Hirofumi Suto, Keisuke Masuda, Hitoshi Iwasaki, and Yuya Sakuraba
Journal:: Applied Physics Letters
Date Uploaded:: 26/02/2024

Description/Abstract:: We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 st...
Keyword:: ELO, HVPE, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Shingo Yagyu, and Takashi Shinohe
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

Description/Abstract:: The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...
Keyword:: HVPE, ε-Ga2O3, and κ-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, Yoshitaka Matsushita, Satoshi Yamamoto, and Kiyoshi Shimamura
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

Description/Abstract:: ScClxとNH3との反応によるHVPEでScNを育成した。成長速度は、原料分圧の増大に伴って最初は増加するが、やがて減少に転じ、最大成長速度は5um/h程度であった。基板は種々試みたが、サファイア(10-12)と(10-10)を用いたときに単一配向のScN(100)および...
Keyword:: HVPE and ScN
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, and Kiyoshi Shimamura
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

Description/Abstract:: We demonstrated epitaxial lateral overgrowth of a-Ga2O3 by halide vapor phase epitaxy. We formed stripe patterned or triangular lattice d...
Keyword:: ELO, HVPE, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Y. Oshima, K. Kawara, T. Shinohe, T. Hitora, M. Kasu, and S. Fujita
Journal:: APL MATERIALS
Date Uploaded:: 29/01/2024
Date Modified:: 01/02/2024

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