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Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
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[Research Highlights Vol.69] Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication
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[Research Highlights Vol.61] First Fabrication of fBBLG/hBN Superlattices
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[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility
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