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Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory
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Crystallographic defects
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Electrical properties and parameters
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Electronic bandstructure
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First-principle calculations
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Random access memory
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American Institute of Physics
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2012
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Harada, Yoshitomo
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Hirayama, Taisei
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Kato, Seiichi
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Kido, Giyuu
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Kitazawa, Hideaki
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journal of applied physics
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