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Gallium nitride
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High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS<sub>2</sub>/<i>i</i>-GaN Vertical Heterojunction
Description/Abstract:
The wide bandgap semiconductor GaN has proven to be an excellent candidate for high-performance ultraviolet (UV) photodetectors owing to ...
Keyword:
Gallium nitride
,
Molybdenum disulfide
,
Photodetector
,
Self-powered
,
Ultraviolet detection
, and
Vertical heterojunction
Resource Type:
Article
Author:
Sushmitha Veeralingam
,
Liwen Sang
,
Hong Pang
,
Renzhi Ma
, and
Sushmee Badhulika
Journal:
ACS Photonics
Date Uploaded:
14/12/2024
Continuous real-time O 1s core XPS spectra of H2O adsorption on +c Ga-face and m-plane surfaces of GaN
Description/Abstract:
The surface oxidation behavior of different GaN surfaces (the polar Ga-face (+c) and the nonpolar m-plane) under H<sub>2</sub>O vapor amb...
Keyword:
GaN
,
Gallium nitride
,
MOS structure
,
Oxidation
,
SPring-8
,
Surface oxidation
, and
XPS
Resource Type:
Dataset
Data origin:
other
Author:
SUMIYA, Masatomo
Date Uploaded:
14/02/2023
Date Modified:
28/02/2023
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
Description/Abstract:
The initial adsorption behavior of different GaN surfaces (the polar Ga-face (+c) and N-face (−c) and the nonpolar (101̅0) (m)-plane) und...
Keyword:
Adsorption
,
GaN
,
Gallium nitride
,
Oxidation
,
SPring-8
, and
XPS
Resource Type:
Dataset
Data origin:
other
Author:
SUMIYA, Masatomo
Date Uploaded:
31/01/2023
Date Modified:
28/02/2023
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Gallium nitride
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Creative Commons BY Attribution 4.0 International
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spectroscopy -- x-ray photoelectron spectroscopy
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SUMIYA, Masatomo
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Sushmee Badhulika
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Indian Institute of Technology Hyderabad
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Japan Society for the Promotion of Science
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Ministry of Education, Culture, Sports, Science and Technology
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National Institute for Materials Science
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Precursory Research for Embryonic Science and Technology
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ACS Photonics
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