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Pt/GaN Schottky barrier height lowering by incorporated hydrogen
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Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
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Ab-initio phonon calculation for GaN / F-43m (216) / materials id 830
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Ab-initio phonon calculation for GaN / P6_3mc (186) / materials id 804
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Continuous real-time O 1s core XPS spectra of H2O adsorption on +c Ga-face and m-plane surfaces of GaN
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Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
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[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
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