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GaN
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Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
Description/Abstract:
Position-dependent three-dimensional reciprocal space mapping (RSM) by nanobeam x-ray diffraction (nanoXRD) was performed to reveal the ...
Keyword:
Dislocation
,
GaN
, and
SPring-8
Resource Type:
Article
Author:
T. Hamachi
,
T. Tohei
,
Y. Hayashi
,
S. Usami
,
M. Imanishi
,
Y. Mori
,
K. Sumitani
,
Y. Imai
,
S. Kimura
, and
A. Sakai
Journal:
Journal of Applied Physics
Date Uploaded:
04/12/2024
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO<sub>2</sub> Process
Description/Abstract:
We report a simple and effective method for improving dielectric/GaN interface properties. In the process, a 5 nm-thick SiO2 layer was de...
Keyword:
GaN
Resource Type:
Article
Author:
Yoshihiro Irokawa
,
Toshihide Nabatame
,
Tomomi Sawada
,
Manami Miyamoto
,
Hiromi Miura
,
Kazuhito Tsukagoshi
, and
Yasuo Koide
Journal:
ECS Journal of Solid State Science and Technology
Date Uploaded:
02/09/2024
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
Description/Abstract:
We investigated the material stability of a vertical GaN Schottky barrier diode (SBD) against proton irradiations by making real-time mea...
Keyword:
GaN
,
MOCVD
,
Proton
,
Radiation irradiations
,
Schottky barrier diode
,
Vertical-type PN junction diode
, and
Xe
Resource Type:
Article
Author:
Hironori Okumura
,
Yohei Ogawara
,
Manabu Togawa
,
Masaya Miyahara
,
Tadaaki Isobe
,
Kosuke Itabashi
,
Jiro Nishinaga
, and
Masataka Imura
Journal:
Japanese Journal of Applied Physics
Date Uploaded:
23/08/2024
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
Description/Abstract:
GaN mesas were fabricated by sequential dry and wet etching of a +c-oriented GaN layer onto a lattice-matched AlInN layer for future appl...
Keyword:
AlInN
,
GaN
,
etching
, and
positive bevel edge termination
Resource Type:
Article
Author:
Takayoshi Oshima
,
Masataka Imura
, and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
02/08/2024
Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
Description/Abstract:
Magnetoresistance (MR) of two-dimensional hole gas (2DHG) samples fabricated from GaN/AlxGa1-xN/GaN (x =0.2–0.25) double hetero- structur...
Keyword:
Double Heterostructures
,
GaN
,
Hole gas
,
Magnetoresistance
, and
Spin-Orbit coupling
Resource Type:
Article
Author:
S. Yamada
,
A. Fujimoto
,
S. Yagi
,
H. Narui
,
E. Yamaguchi
, and
Y. Imanaka
Journal:
Applied Physics Letters
Date Uploaded:
12/07/2024
Classification for transmission electron microscope images from different amorphous states using persistent homology
Description/Abstract:
アモルファスと液体状態のTEM像を種々のフォーカスでシミュレーションによって作成し、それらをパーシステントホモロジーと機械学習を用いて識別可能か検討を行った。その結果、実効的なフォーカス範囲において正答率が85%以上であったことを報告する。
Keyword:
Amorphous structure
,
GaN
,
TEM image simulation
, and
persistent homology
Resource Type:
Article
Author:
Fumihiko Uesugi
and
Masashi Ishii
Journal:
Microscopy
Date Uploaded:
04/07/2024
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Description/Abstract:
For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely ...
Keyword:
GaN
Resource Type:
Article
Author:
Shigefusa F. Chichibu
,
Kohei Shima
,
Akira Uedono
,
Shoji Ishibashi
,
Hiroko Iguchi
,
Tetsuo Narita
,
Keita Kataoka
,
Ryo Tanaka
,
Shinya Takashima
,
Katsunori Ueno
,
Masaharu Edo
,
Hirotaka Watanabe
,
Atsushi Tanaka
,
Yoshio Honda
,
Jun Suda
,
Hiroshi Amano
,
Tetsu Kachi
,
Toshihide Nabatame
,
Yoshihiro Irokawa
, and
Yasuo Koide
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
09/05/2024
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
Description/Abstract:
Changes in the hydrogen-induced Schottky barrier height (ΦB) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investi...
Keyword:
GaN
,
Schottky barrier height
, and
hydrogen
Resource Type:
Article
Author:
色川 芳宏
,
大井 暁彦
,
生田目 俊秀
, and
小出 康夫
Journal:
ECS Journal of Solid State Science and Technology
Date Uploaded:
10/04/2024
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
Description/Abstract:
Enhancement of energy resolution due to evolution of monochromators has made electron energy loss spectroscopy (EELS) in transmission ele...
Keyword:
4D-STEM
,
ABF-STEM
,
EELS
,
GaN
,
HAADF-STEM
,
HAXPES
, and
defect
Resource Type:
Article
Author:
Shunsuke Yamashita
,
Sei Fukushima
,
Jun Kikkawa
,
Ryoji Arai
,
Yuya Kanitani
,
Koji Kimoto
, and
Yoshihiro Kudo
Journal:
APL Materials
Date Uploaded:
19/03/2024
Ab-initio phonon calculation for GaN / F-43m (216) / materials id 830
Description/Abstract:
Ab-initio phonon calculation for GaN / F-43m (216) Phonon band structure, phonon DOS, thermal properties at constant volume, and phonon r...
Keyword:
F-43m (216)
,
GaN
, and
Phonon
Resource Type:
Dataset
Data origin:
simulation
Author:
Atsushi Togo
Date Uploaded:
25/05/2023
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