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[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
Description/Abstract:
A team at MANA has demonstrated a highly temperature-stable GaN resonator that boasts high-frequency stability, high Q factor and the pot...
Keyword:
Strain
,
AlN
,
GaN
,
MEMS
,
NEMS
,
Si
,
energy storage
, and
temperature coefficient of frequency
Resource Type:
Article
Author:
International Center for Materials Nanoarchitectonics (WPI-MANA)
Date Uploaded:
18/12/2022
Date Modified:
19/12/2022
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