Index Catalog // MDR

Description/Abstract:: In this paper, planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transis...
Keyword:: Diamond, MOSFET, and triple-gate
Resource Type:: Article
Author:: LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, and KOIDE, Yasuo
Date Uploaded:: 28/02/2023

Description/Abstract:: MANA researchers have devised a way to control the carrier density in various materials under high pressure by combining an electric doub...
Keyword:: Bi, Diamond, Electric Double Layer, Field-Effect transistor, High pressure, and Ionic liquid
Resource Type:: Article
Author:: International Center for Materials Nanoarchitectonics (WPI-MANA)
Date Uploaded:: 18/12/2022
Date Modified:: 19/12/2022

Description/Abstract:: Just as magnets attract iron particles in sandpits, permanent magnetics only attract one type of ion in an electrochemical solution, cons...
Keyword:: (Bmim)FeCl4, Diamond, Electric double layer transistor, Magnetic ionic liquid, Magnetoelectrochemistry, and Nanoionic devices
Resource Type:: Article
Author:: International Center for Materials Nanoarchitectonics (WPI-MANA)
Date Uploaded:: 18/12/2022
Date Modified:: 19/12/2022

Description/Abstract:: Researchers used materials discovery methods to identify and synthesize a material that has thermoelectric properties and, under pressure...
Keyword:: Data-driven, Diamond, High pressure, SnBi2Se4, Superconductivity, and Thermometric material
Resource Type:: Article
Author:: International Center for Materials Nanoarchitectonics (WPI-MANA)
Date Uploaded:: 18/12/2022
Date Modified:: 19/12/2022

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