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Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy, Quantitative Evaluation of the Surface Roughness Caused by Ion Sputtering
Description/Abstract:
We have conducted Auger depth profiling analyses of InP/GaInAsP multilayer specimens, in which the surface roughness was caused by the ar...
Keyword:
Auger depth profiling analysis
,
InP/GaInAsP multilayer specimens
,
surface roughness
,
atomic force microscope
, and
depth resolution function
Material/Specimen:
InP/GaInAsP multilayer specimens
Resource Type:
Article
Author:
OGIWARA, Toshiya
and
TANUMA, Shigeo
Journal:
Journal of The Surface Science Society of Japan
Date Uploaded:
01/10/2021
Date Modified:
01/10/2021
Auger Depth Profiling Analyses of InP/GaInAsP Multilayers
Description/Abstract:
We have investigated the dependence of the depth resolution of Auger depth profiles of InP/GaInAsP multilayer specimens on the sputtering...
Keyword:
Auger depth profiling analysis
,
InP/GaInAsP multilayer specimens
, and
argon ion sputtering
Material/Specimen:
InP/GaInAsP multilayer specimens
Resource Type:
Article
Author:
OGIWARA, Toshiya
and
TANUMA, Shigeo
Journal:
Journal of The Surface Science Society of Japan
Date Uploaded:
01/10/2021
Date Modified:
01/10/2021
Depth Profiling Analysis of InP/GaInAsP Multilayer Structure with Auger Electron Spectroscopy by Using Argon Ion Spot Beam
Description/Abstract:
It is very difficult to obtained the Auger depth profile of InP multilayer structures with argon ion sputtering because the very large su...
Keyword:
Auger Depth Profiling Analysis
,
Argon Ion Spot Beam
, and
InP/GaInAsP Multilayer Specimen
Material/Specimen:
InP/GaInAsP Multilayer
Resource Type:
Article
Author:
OGIWARA, Toshiya
,
HARADA, Tomoko
, and
TANUMA, Shigeo
Journal:
Journal of The Surface Science Society of Japan
Date Uploaded:
01/10/2021
Date Modified:
01/10/2021
Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy. Effects of Zalar Rotation and Liquid Nitrogen Cold Stage
Description/Abstract:
We have investigated the Auger depth profiling analysis of InP/GaInAsP multilayer specimens. It is difficult to obtain the Auger depth pr...
Keyword:
Auger Depth Profiling Analysis
,
InP/GaInAsP Multilayers
,
Zalar Rotation Method
, and
Sample Cooling Method
Material/Specimen:
InP/GaInAsP Multilayers
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Tanuma, Shigeo
,
Nagasawa, Yuji
, and
Ikeo, Nobuyuki
Journal:
Journal of The Surface Science Society of Japan
Date Uploaded:
09/09/2021
Date Modified:
09/09/2021
InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告(I)
Description/Abstract:
AES深さ方向分析の標準化を進めるために,InP/GaInAs多層膜を用いたデプスプロファイル測定のラウンドロビン試験を行った.参加した23機関の装置は3社に分類され,その仕様が異なるため,測定条件は電子線およびイオンの加速電圧を3kVに固定して,その他の条件は各機関に一任...
Keyword:
Auger Depth Profiling Analysis
,
InP/GaInAs Specimen
, and
Round Robin Test
Material/Specimen:
InP/GaInAs Multilayer
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
29/07/2021
Date Modified:
02/08/2021
Arイオンスパッタリングされた各種化合物半導体表面のSEM観察
Description/Abstract:
各種化合物半導体の表面をArイオンでスパッタリングして,その表面のSEM観察を行なった.そして,イオンスパッタリング時の試料温度および試料回転の有無と表面形状の関係を系統的に調べた.その結果,表面あれはスパッタリングされた表面全体に生成する場合とコーン状の突起物がランダムに...
Keyword:
compound semiconductor
,
surface observation using a scanning electron microscope
, and
argon ion sputtering
Material/Specimen:
InP
,
InSb
,
InAs
,
GaAs
,
GaSb
, and
GaP
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
28/05/2021
Date Modified:
04/06/2021
InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性
Description/Abstract:
InP/GaInAsP多層膜を用いて,AES深さ方向分析における深さ分解能の試料温度依存性について検討を行なった.試料温度は,0〜50℃(10℃間隔)およびー120,−20℃の8条件としてデプスプロファイルを取得した.スパッタリング条件は,イオン種:Ar,イオン加速電圧:1...
Keyword:
InP/GaInAsP多層膜
,
Auger Depth Profiling Analysis
,
Depth Resolution
, and
Sample Temperature
Material/Specimen:
InP/GaInAsP Multilayer Film
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
28/05/2021
Date Modified:
28/05/2021
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InP/GaInAsP multilayer specimens
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argon ion sputtering
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Surface Science Society of Japan
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InP/GaInAsP multilayer specimens
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Ogiwara, Toshiya
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