Index Catalog // MDR

Start Over

Filtering by: Type of work Publication Keyword hBN/h-BN

[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility

Description/Abstract:

A research team at WPI-MANA, using a new fabrication technique, has developed a diamond field-effect transistor with high hole mobility, ...

Keyword:

diamond, field-effect transistor, graphite, hBN, hBN/h-BN, hexagonal boron nitride, hydrogen-terminated, mobility, and wide bandgap

Resource Type:

Article

Author:

International Center for Materials Nanoarchitectonics (WPI-MANA)

Date Uploaded:

18/12/2022

Date Modified:

19/12/2022