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Random access memory
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Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory
Description/Abstract:
As a next-generation memory, we have developed a rare-metal-free memory using Al oxide with a high-density of oxygen vacancies (Vos). Th...
Keyword:
Crystallographic defects
,
Electrical properties and parameters
,
Electronic bandstructure
,
First-principle calculations
,
Random access memory
,
Resistive switching
,
Thermally stimulated current spectroscopy
,
Transmission electron microscope
,
electron energy loss spectroscopy
, and
semiconductor structures
Resource Type:
Article
Author:
Harada, Yoshitomo
,
Kido, Giyuu
,
Hirayama, Taisei
,
Kato, Seiichi
,
Nigo, Seisuke
,
Kubota, Masato
, and
Kitazawa, Hideaki
Journal:
journal of applied physics
Date Uploaded:
05/10/2020
Date Modified:
06/10/2020
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Crystallographic defects
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Electronic bandstructure
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First-principle calculations
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Random access memory
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American Institute of Physics
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Date
2012
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Harada, Yoshitomo
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Hirayama, Taisei
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Kato, Seiichi
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Kido, Giyuu
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Kitazawa, Hideaki
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journal of applied physics
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