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Journal of Surface Analysis
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Estimation of Inelastic Mean Free Paths in Au and Cu from Their Elastic Peak Intensity Ratios without IMFP Values of Reference Material in The 200 – 5000 eV Energy Range
Description/Abstract:
We have determined electron inelastic mean free paths (IMFPs) and surface-electronic excitation parameters (SEPs) of Au and Cu in the 200...
Keyword:
Au and Cu
,
EPES
,
IMFP
,
elastic peak intensity
, and
electron inelastic mean free path
Resource Type:
Article
Author:
S. Tanuma
,
H. Yoshikawa
,
N. Okamoto
, and
K. Goto
Journal:
Journal of Surface Analysis
Date Uploaded:
25/10/2023
Date Modified:
25/10/2023
表面電子分光法における信号の減衰はいかに記述されるか? II. 誘電関数とIMFP
Description/Abstract:
表面電子分光法では電子および光と物質の相互作用は非常に重要であり,信号の減衰を理解するのに不可欠である。そこで,これらの相互作用を統一的に考えるために誘電関数,エネルギー損失関数を導入し,光・電子と物質の相互作用について解説する。また,発生した電子を検出する表面電子分光法で...
Keyword:
electron inelastic mean free paths
,
surface electron spectroscopy
,
dielectric function
, and
energy loss function
Resource Type:
Article
Author:
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
27/06/2022
Date Modified:
01/07/2022
English Translation of J. Surf. Anal. 24, 192-205(2018), Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam
Description/Abstract:
We have investigated the Auger depth profiling analysis of HfO2 /Si by the glancing angle ion beam sputtering method at an incident angle...
Keyword:
Auger Depth Profiling Analysis
,
HfO2/Si
, and
Ultra Low Angle Incidence Ion Beam
Material/Specimen:
HfO2
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Nagata, Takahiro
, and
Yoshikawa, Hideki
Journal:
Journal of Surface Analysis
Date Uploaded:
19/08/2021
Date Modified:
20/08/2021
InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告(I)
Description/Abstract:
AES深さ方向分析の標準化を進めるために,InP/GaInAs多層膜を用いたデプスプロファイル測定のラウンドロビン試験を行った.参加した23機関の装置は3社に分類され,その仕様が異なるため,測定条件は電子線およびイオンの加速電圧を3kVに固定して,その他の条件は各機関に一任...
Keyword:
Auger Depth Profiling Analysis
,
InP/GaInAs Specimen
, and
Round Robin Test
Material/Specimen:
InP/GaInAs Multilayer
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
29/07/2021
Date Modified:
02/08/2021
High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy Apparatus Equipped with Concentric Hemispherical Analyzer
Description/Abstract:
半球型電子分光器を搭載したオージェ電子分光装置では,傾斜ホルダーを用いると装置のジオ メトリー特性との関係からイオン及び一次電子の入射角の自由度が大きくなる.特に試料回転の 回転軸が一次電子の入射方向と一致する場合は,傾斜ホルダーの回転角によってイオン入射角を 設定でき,電...
Keyword:
Auger Depth Profiling Analysis
,
Inclined Holder
,
GaAs/AlAs Superlattice
, and
Si/Ge multiple delta-doped layers
Material/Specimen:
GaAs/AlAs Superlattice
and
Si/Ge multiple delta-doped layers
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Nagatomi, Takaharu
,
Kim, Kyung Joong
, and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
14/06/2021
Date Modified:
18/06/2021
Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra Low Angle Incidence Ion Beam
Description/Abstract:
磁気ヘッド材料として用いられているFeNi:5 nm/CoFeB:3 nm/FeNi:10 nm多層薄膜の深さ方向組成分布を調べるために,極低角度入射イオンビームを用いたオージェ深さ方向分析によりイオン加速電圧0.5 kVおよび3.0 kVのスパッタ条件で分析を行った.その...
Keyword:
Auger Depth Profiling Analysis
,
Ultra Low Angle Incidence Ion Beam
, and
FeNi/CoFeB/FeNi Thin Film
Material/Specimen:
FeNi/CoFeB/FeNi Thin Film
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Yanagiuchi, Katsuaki
, and
Yoshikawa, Hideki
Journal:
Journal of Surface Analysis
Date Uploaded:
28/05/2021
Date Modified:
04/06/2021
Arイオンスパッタリングされた各種化合物半導体表面のSEM観察
Description/Abstract:
各種化合物半導体の表面をArイオンでスパッタリングして,その表面のSEM観察を行なった.そして,イオンスパッタリング時の試料温度および試料回転の有無と表面形状の関係を系統的に調べた.その結果,表面あれはスパッタリングされた表面全体に生成する場合とコーン状の突起物がランダムに...
Keyword:
compound semiconductor
,
surface observation using a scanning electron microscope
, and
argon ion sputtering
Material/Specimen:
InP
,
InSb
,
InAs
,
GaAs
,
GaSb
, and
GaP
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
28/05/2021
Date Modified:
04/06/2021
InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性
Description/Abstract:
InP/GaInAsP多層膜を用いて,AES深さ方向分析における深さ分解能の試料温度依存性について検討を行なった.試料温度は,0〜50℃(10℃間隔)およびー120,−20℃の8条件としてデプスプロファイルを取得した.スパッタリング条件は,イオン種:Ar,イオン加速電圧:1...
Keyword:
InP/GaInAsP多層膜
,
Auger Depth Profiling Analysis
,
Depth Resolution
, and
Sample Temperature
Material/Specimen:
InP/GaInAsP Multilayer Film
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
28/05/2021
Date Modified:
28/05/2021
Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam
Description/Abstract:
We have investigated the Auger depth profiling analysis of HfO2/Si by the glancing-angle ion beam sputtering method at an incident angle ...
Keyword:
Auger Depth Profiling analysis
,
HfO2/Si
, and
Ultra Low Angle Incidence Ion Beam
Material/Specimen:
HfO2
Resource Type:
Article
Author:
Yoshikawa, Hideki
,
Ogiwara, Toshiya
, and
Nagata, Takahiro
Journal:
Journal of Surface Analysis
Date Uploaded:
25/05/2021
Date Modified:
26/05/2021
電子線マイクロアナライザーによるMg-Ge合金の定量 -Mg Kαに対するGeの質量吸収係数の検討-, Electron microprobe analysis of Mg-Ge alloy -Examination of the mass absorption coefficient of Ge for MgKα–
Description/Abstract:
電子線マイクロアナライザーは広く材料の分析に用いられ,定量分析法はZAF法としてほぼ確立されている.しかし,Mg-Ge合金においては,定量分析の結果MgとGeの濃度の合計120wt.% と異常な値を示した.しかも電子線の加速電圧が高くなるに従ってMgの定量値が上昇する.こ...
Keyword:
Mg-Ge alloy
,
ZAF
,
electron probe microanalyzer
, and
mass absorption coefficient
Resource Type:
Article
Author:
Nishio, Mitsuaki
,
Imai, Motoharu
,
Tanuma, Shigeo
,
Yoshikawa, HIdeki
, and
Isoda, Yukihiro
Journal:
Journal of Surface Analysis
Date Uploaded:
20/07/2020
Date Modified:
22/07/2020
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Auger Depth Profiling analysis
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7
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8
National Institute for Materials Science
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10
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10
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In Copyright
9
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
1
Material/Specimen
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2
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1
GaAs
1
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1
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7
Tanuma, Shigeo
6
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3
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