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Estimation of Inelastic Mean Free Paths in Au and Cu from Their Elastic Peak Intensity Ratios without IMFP Values of Reference Material in The 200 – 5000 eV Energy Range
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表面電子分光法における信号の減衰はいかに記述されるか？ II. 誘電関数とIMFP
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English Translation of J. Surf. Anal. 24, 192-205(2018), Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam
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InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告（I）
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High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy Apparatus Equipped with Concentric Hemispherical Analyzer
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Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra Low Angle Incidence Ion Beam
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Arイオンスパッタリングされた各種化合物半導体表面のSEM観察
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InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性
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Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam
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電子線マイクロアナライザーによるMg-Ge合金の定量 -Mg Kαに対するGeの質量吸収係数の検討- and Electron microprobe analysis of Mg-Ge alloy -Examination of the mass absorption coefficient of Ge for MgKα–
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