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Applied Physics Letters
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Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
Perspective on nanoscale magnetic sensors using giant anomalous Hall effect in topolog...
Coalescence delay of microbubbles on superhydrophobic/superhydrophilic surfaces underw...
Midgap luminescence centers in single-wall carbon nanotubes created by ultraviolet ill...
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Ga2O3
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Weyl semimetal
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anomalous Hall effect
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b-Ga2O3
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dopant
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English
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AIP Publishing
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In Copyright
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2006
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2018
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Doi, Kotaro
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Hajime Tanida
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Hirofumi Suto
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Hitoshi Iwasaki
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Iakoubovskii, NIMS
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Ministry of Education, Culture, Sports, Science and Technology
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Core Research for Evolutional Science and Technology
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Japan Atomic Energy Agency
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Journal
Applied Physics Letters
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