Thin films of Sr(Zr,Ti)O3 were investigated as buffer layers to induce tensile strain in ferroelectric thin films such as PbTiO3 and Pb(Z...

An implementation of drift compensation for imaging at the nanoscale is presented. The method is based on computer vision techniques and ...

This study investigates the thermoelectric properties of p-type Bi0.5Sb1.5Te3 with added 10% Te composites containing a varying ratio of ...

Copper(I) iodide, CuI, is the leading p-type non-toxic and earth-abundant semiconducting material for transparent electronics and thermoe...

High-performance boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated. Drain curre...

Diamond electronic devices have garnered significant interest owing to their excellent semiconducting properties. We recently demonstrate...

Gate-voltage dependent quantum oscillations in topological insulator Sn0.02 Bi 1.08Sb 0.9 Te 2 S (Sn-BSTS) are analyzed on the basis of t...

Thermoelectric power generation is a promising technology that can directly convert thermal energy into electrical energy and is expected...

Antiferromagnetic L12-Mn3Ir combines outstanding spin-transport properties with magnons in the terahertz (THz) frequency range. However, ...

Sm-Co bulk alloys are well known permanent magnets having large remanent magnetizations and coercive forces and are widely used in many i...