In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge...

The nanosized boron vacancy (V−B) defect spot in hexagonal boron nitride (h-BN) is promising for a local magnetic field quantum sensor. O...

Van der Waals heterostructure is the ideal material platform in the tunnel field effect transistors (TFET), because the band-to-band tunn...

Color centers in wide band-gap semiconductors have been actively applied to quantum sensing devices. Characterizing the quantum propertie...

A dual-gate anti-ambipolar transistor (AAT) with a two-dimensional ReS2 and WSe2 heterojunction was developed. The characteristic Λ-shape...

Diamond electronic devices have garnered significant interest owing to their excellent semiconducting properties. We recently demonstrate...

Synthesizing densified glasses with structure ordering is an important issue for the development of new optical fibers with high refracti...

Rare-earth tritellurides are van-der-Waals antiferromagnets which have been attracting attention as materials not only with high mobility...

We have developed a microspectroscopy technique for measuring gate-modulated reflectance to probe excitonic states in two-dimensional tra...

In this study, rhombohedral boron monosulfide (r-BS) was synthesized by a high-pressure solid-state reaction, and its photocatalytic prop...